The present disclosure relates to coated non-metallic substrates and coated metallic substrates, and methods for producing such coated substrates. A variant of the method is characterized in that a mat or glossy coating is underneath a metallic layer obtained in some cases by way of vapor deposition and/or sputtering. In another variant, the metallic is sufficiently thin so that it remains transparent or translucent to visible light. The coated substrates may include multiple layers such as metallic layers, polysiloxane layers, a color layer, a conversion layer, a primer layer, and/or a transparent or colored layer. An application system for applying a metallic layer to at least one surface of a substrate may include a plasma generator and/or a corona system for treating one or more layers by plasma treatment and/or corona treatment.

A method of forming a film is performed in a heat treatment apparatus that includes a processing container, a tubular member provided in the processing container, a heater configured to heat an inside of the processing container, and a gas supply. The method includes: providing a substrate in the tubular member; adjusting a temperature inside the tubular member by the heater; and after adjusting the temperature, supplying a gas containing a film-forming gas from the gas supply into the processing container to form a film on the substrate. In the adjusting the temperature, a gas containing a heat transfer gas is supplied from the gas supply into the processing container.

A method of forming a film is performed in a heat treatment apparatus that includes a processing container, a tubular member provided in the processing container, a heater configured to heat an inside of the processing container, and a gas supply. The method includes: providing a substrate in the tubular member; adjusting a temperature inside the tubular member by the heater; and after adjusting the temperature, supplying a gas containing a film-forming gas from the gas supply into the processing container to form a film on the substrate. In the adjusting the temperature, a gas containing a heat transfer gas is supplied from the gas supply into the processing container.

A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable the raising and lowering of a shadow ring within a process chamber either simultaneously with or separately from a plurality of substrate lift pins. The shadow ring is raised and lowered using a shadow ring lift assembly and may be raised to a pre-determined height above the substrate during a radical treatment operation. The shadow ring lift assembly may also raise and lower the plurality of substrate lift pins to enable both the shadow ring and the substrate lift pins to be raised to a transfer position when the substrate is being transferred into or out of the process chamber.

A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable the raising and lowering of a shadow ring within a process chamber either simultaneously with or separately from a plurality of substrate lift pins. The shadow ring is raised and lowered using a shadow ring lift assembly and may be raised to a pre-determined height above the substrate during a radical treatment operation. The shadow ring lift assembly may also raise and lower the plurality of substrate lift pins to enable both the shadow ring and the substrate lift pins to be raised to a transfer position when the substrate is being transferred into or out of the process chamber.

Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.