C23C16/06

Dual selective deposition

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

DEPOSITION OF PURE METAL FILMS

Provided herein are methods and apparatus for deposition of pure metal films. The methods involve the use of oxygen-containing precursors. The metals include molybdenum (Mo) and tungsten (W). To deposit pure films with no more than one atomic percentage oxygen, the reducing agent to metal precursor ratio is significantly greater than 1. Molar ratios of 100:1 to 10000:1 may be used in some embodiments.

DEPOSITION OF PURE METAL FILMS

Provided herein are methods and apparatus for deposition of pure metal films. The methods involve the use of oxygen-containing precursors. The metals include molybdenum (Mo) and tungsten (W). To deposit pure films with no more than one atomic percentage oxygen, the reducing agent to metal precursor ratio is significantly greater than 1. Molar ratios of 100:1 to 10000:1 may be used in some embodiments.

SURFACES FOR CONTACTING A HYDROCARBON FLUID AND METHODS FOR PREPARING THE SAME

A component configured to be in contact with a hydrocarbon fluid and a method of preparing a contact surface of the component. The component may include a wall having the contact surface configured to be in contact with the hydrocarbon fluid. The contact surface is formed from a metal comprising a metal M, where M is selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt). A metal-ligand complex comprising phosphorus (P) is on the contact surface. The method of preparing a contact surface of the component may include treating the contact surface with a metal-ligand complex precursor comprising a phosphorus (P) ligand.

SURFACES FOR CONTACTING A HYDROCARBON FLUID AND METHODS FOR PREPARING THE SAME

A component configured to be in contact with a hydrocarbon fluid and a method of preparing a contact surface of the component. The component may include a wall having the contact surface configured to be in contact with the hydrocarbon fluid. The contact surface is formed from a metal comprising a metal M, where M is selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt). A metal-ligand complex comprising phosphorus (P) is on the contact surface. The method of preparing a contact surface of the component may include treating the contact surface with a metal-ligand complex precursor comprising a phosphorus (P) ligand.

METAL OXIDE RESIST PATTERNING WITH ELECTRICAL FIELD GUIDED POST-EXPOSURE BAKE

A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.

METAL OXIDE RESIST PATTERNING WITH ELECTRICAL FIELD GUIDED POST-EXPOSURE BAKE

A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.

DEPOSITION METHOD AND DEPOSITION APPARATUS
20220389567 · 2022-12-08 ·

A film deposition method includes preparing a substrate having an insulating film formed thereon, forming a seed layer on the insulating film, and supplying a molybdenum-containing gas and a reducing gas to the substrate having the seed layer famed thereon, to foam a molybdenum film on the seed layer.

DEPOSITION METHOD AND DEPOSITION APPARATUS
20220389567 · 2022-12-08 ·

A film deposition method includes preparing a substrate having an insulating film formed thereon, forming a seed layer on the insulating film, and supplying a molybdenum-containing gas and a reducing gas to the substrate having the seed layer famed thereon, to foam a molybdenum film on the seed layer.

MULTI-COLORED DECORATIVE COMPONENT AND METHOD
20220379655 · 2022-12-01 ·

A decorative component includes a plurality of metal finish layers deposited over a substrate and a plurality of sub-layers. The outermost metal finish layer is selectively deposited or removed to define one or more recesses to create different appearances of the component. The outer metal layer may undergo laser ablation to remove at least a portion of the outer layer while still exposing the outer layer in the area of removed material. The recess may extend fully through the outer layer to expose the underlying metal finish layer, and/or the recess may have a sloped bottom surface to define a gradient appearance. The outer layer may be applied over a mask that is applied to the underlying layer, such that the outer layer is selectively applied. The outer layer may be removed to expose the underlying finish layer without exposing a nickel sublayer and without requiring a top coat.