Patent classifications
C23C16/22
Methods of preparing high density aligned silicon nanowire
A simple, economical method of producing nanowire arrays is described. The method produces high density arrays having nanowires with diameters below 10 nm and does not require templating, catalysts, or surface pre/post-treatment. The disclosed methods and systems can be used, for example, for optoelectronic devices and photovoltaic cells, Li-ion batteries, chemical/bio sensors and transistors.
Methods of preparing high density aligned silicon nanowire
A simple, economical method of producing nanowire arrays is described. The method produces high density arrays having nanowires with diameters below 10 nm and does not require templating, catalysts, or surface pre/post-treatment. The disclosed methods and systems can be used, for example, for optoelectronic devices and photovoltaic cells, Li-ion batteries, chemical/bio sensors and transistors.
SI-O-N-P RELATED FABRICATION METHODS, SURFACE TREATMENTS AND USES THEREOF
Disclosed are compositions, methods and processes for fabricating and using a device or other implement including a surface or surfaces having a nanoscale or microscale layer or coating of Si—O—N—P. These coatings and/or layers may be continuous, on the surface or discontinuous (e.g., patterned, grooved), and may be provided on silica surfaces, metal (e.g., titanium), ceramic, and combination/hybrid materials. Methods of producing an implantable device, such as a load-bearing or non-load-bearing device, such as a bone or other structural implant device (load-bearing), are also presented. Craniofacial, osteogenic and disordered bone regeneration (osteoporosis) uses and applications of devices that include at least one surface that is treated to include a nanoscale or microscale layer or coating of Si—O—N—P are also provided. Methods of using the treated and/or coated devices to enhance enhanced vascularization and healing at a treated surface of a device in vivo, is also presented.
SI-O-N-P RELATED FABRICATION METHODS, SURFACE TREATMENTS AND USES THEREOF
Disclosed are compositions, methods and processes for fabricating and using a device or other implement including a surface or surfaces having a nanoscale or microscale layer or coating of Si—O—N—P. These coatings and/or layers may be continuous, on the surface or discontinuous (e.g., patterned, grooved), and may be provided on silica surfaces, metal (e.g., titanium), ceramic, and combination/hybrid materials. Methods of producing an implantable device, such as a load-bearing or non-load-bearing device, such as a bone or other structural implant device (load-bearing), are also presented. Craniofacial, osteogenic and disordered bone regeneration (osteoporosis) uses and applications of devices that include at least one surface that is treated to include a nanoscale or microscale layer or coating of Si—O—N—P are also provided. Methods of using the treated and/or coated devices to enhance enhanced vascularization and healing at a treated surface of a device in vivo, is also presented.
FILMS INCLUDING A WATER-SOLUBLE LAYER AND A VAPOR-DEPOSITED ORGANIC COATING
Films including a water-soluble layer and a vapor-deposited organic coating are disclosed. The films can optionally further include a vapor-deposited inorganic layer. The films exhibit enhanced barrier properties.
Method of forming process film
A method of forming a process film includes the following operations. A substrate is transferred into a process chamber having an interior surface. A process film is formed over the substrate, and the process film is also formed on the interior surface of the process chamber. The substrate is transferred out of the process chamber. A non-process film is formed on the interior surface of the process chamber. In some embodiments, porosity of the process film is greater than a porosity of the non-process film.
Method of forming process film
A method of forming a process film includes the following operations. A substrate is transferred into a process chamber having an interior surface. A process film is formed over the substrate, and the process film is also formed on the interior surface of the process chamber. The substrate is transferred out of the process chamber. A non-process film is formed on the interior surface of the process chamber. In some embodiments, porosity of the process film is greater than a porosity of the non-process film.
Tetrakis(trichlorosilyl)germane, process for the preparation thereof and use thereof
A novel process provides for the preparation of the chlorinated, uncharged substance tetrakis(trichlorosilyl)germane, and for the use thereof.
Tetrakis(trichlorosilyl)germane, process for the preparation thereof and use thereof
A novel process provides for the preparation of the chlorinated, uncharged substance tetrakis(trichlorosilyl)germane, and for the use thereof.
SILICON-CARBON COMPOSITE MATERIAL AND PREPARATION METHOD THEREOF
A silicon-carbon composite material includes a matrix core, a silicon-carbon composite shell formed by uniformly dispersing nano silicon particles in conductive carbon, and a coating layer. The nano silicon particles are formed by high-temperature pyrolysis of a silicon source, and the conductive carbon is formed by high-temperature pyrolysis of an organic carbon source. The coating layer is a carbon coating layer including at least one layer, and the thickness of its single layer is 0.2-3 μm. A silicon-carbon composite material precursor is formed by simultaneous vapor deposition and is then subjected to carbon coating to form the pitaya-like silicon-carbon composite material which has advantages of high first-cycle efficiency, low expansion and long cycle. The grain growth of the silicon material is slowed down during the heat treatment process, the pulverization of the material is effectively avoided, and the cycle performance, conductivity and rate performance of the material are enhanced.