The present invention relates to a process for the preparation of a bi-layer coated steel substrate comprising an inner inorganic ceramic layer and an external sol-gel layer, or alternatively an inner sol-gel layer and an external inorganic ceramic layer and to the bi-layer coated steel substrate obtainable by this process.

The present invention relates to a process for the preparation of a bi-layer coated steel substrate comprising an inner inorganic ceramic layer and an external sol-gel layer, or alternatively an inner sol-gel layer and an external inorganic ceramic layer and to the bi-layer coated steel substrate obtainable by this process.

Films including a water-soluble layer and a vapor-deposited organic coating are disclosed. The films can optionally further include a vapor-deposited inorganic layer. The films exhibit enhanced barrier properties.

Films including a water-soluble layer and a vapor-deposited organic coating are disclosed. The films can optionally further include a vapor-deposited inorganic layer. The films exhibit enhanced barrier properties.

Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.

Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.

Films including a water-soluble layer and a vapor-deposited organic coating are disclosed. The films can optionally further include a vapor-deposited inorganic layer. The films exhibit enhanced barrier properties.

Films including a water-soluble layer and a vapor-deposited organic coating are disclosed. The films can optionally further include a vapor-deposited inorganic layer. The films exhibit enhanced barrier properties.

The invention relates to a coating method for energetic material (12), in particular in a vacuum. The energetic material (12) is coated by chemical or physical vapor deposition. The coating material (16) is electrically conductive and/or hydrophobic or hydrophilic. The energetic material (12) is shaped as grains and/or pellets and/or is in the form of a powder.

A gas introduction structure for supplying a processing gas into a vertically-elongated processing container, includes a processing gas supply pipe extending along a longitudinal direction of the processing container in the processing container and having a plurality of gas discharge holes formed along the longitudinal direction, the processing gas supply pipe configured so that the processing gas is introduced from one end toward the other end thereof, wherein a dilution gas is supplied to a portion of the processing gas supply pipe that is closer to the other end than the one end of the processing gas supply pipe.