A trap is provided for a vacuum line to be mounted on a pipe connected to a reactor, the trap including: a chamber including an inlet and a bottom wall; an outlet tube in communication with the chamber and including another inlet, the inlet and the outlet tube are configured to be connected to the pipe and to permit passage of a flow of gas to be pumped coming from the reactor; and a deflector between the inlet and the another inlet, the bottom wall being below the another inlet and being an annular cup or an adjustable height cup, and conformed so as to cooperate with the deflector to permit an accumulation of solid elements in the bottom wall when the flow of gas is reduced and to expel the solid elements from the chamber by aerodynamic entrainment when the flow of gas is increased.

Cathode composition including a core cathode body composed of nickel oxide crystallite particles and a surface cathode coating layer contacting and at least partially surrounding an outer surface of the core cathode body. The surface cathode coating layer includes one or more of a transition metal or post-transition metal oxide or fluoride and one or more of lanthanide row atoms having a concentration in a range from about 0.1 to 10 mol %, has a thickness in a range from about 0.5 to 30 nm, and has an amorphous, polycrystalline or composite amorphous/polycrystalline atomic structure. Method of manufacture including preparing a cathode composition includes forming a core cathode body composed of nickel oxide crystallite particles, and, forming by atomic layer deposition, a surface cathode coating layer contacting and at least partially surrounding an outer surface of the core cathode body.

The present invention discloses a semiconductor device and an oxygen removal method thereof. The semiconductor device comprises: a process cavity, an oxygen removal pipe and an oxygen detection device, wherein the oxygen detection device comprises an oxygen detection pipe, a switching ball valve and an oxygen sensor; the oxygen detection pipe comprises a first pipe, a second pipe and a third pipe which are arranged in parallel and all connected to the oxygen removal pipe and the switching ball valve; the oxygen sensor is arranged on the third pipe; and, the switching ball valve is constructed in such a way that the switching ball valve communicates the first pipe with the second pipe in an oxygen removal stage and communicates the first pipe with the third pipe in an oxygen detection stage.

A gas system includes an enclosure, a process gas metering valve, a shutoff valve, and a flow switch. The process gas metering valve arranged within the enclosure to flow a process gas to a process chamber of a semiconductor processing system. The shutoff valve is connected to the process gas metering valve to fluidly separate the process gas metering valve from a process gas source. The flow switch is operably connected to the shutoff valve to cease flow of the process gas to the process chamber of the semiconductor processing system using the shutoff valve according to flow of a gas traversing the flow switch. Semiconductor processing systems, gas control methods, and gas system kits are also described.

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are quartz crystal film thickness monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.

A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

The present invention is related to a process for coating anoxide material, said process comprising the following steps: (a) providing a particulate material selected from lithiated nickel-cobalt aluminum oxides, lithiated cobalt-manganese oxides and lithiated layered nickel-cobalt-manganese oxides, (b) treating said cathode active material with a metal alkoxide or metal amide or alkyl metal compound, (c) treating the material obtained in step (b) with moisture, and, optionally, repeating the sequence of steps (b) and (c), wherein steps (b) and (c) are carried out in a mixer that mechanically introduces mixing energy into the particulate material, or by way of a moving bed or fixed bed, and wherein steps (b) and (c) are carried out at a pressure that is in the range of from 5 mbar to 1 bar above normal pressure.

A module for a vacuum pumping and/or abatement system. The module comprises a frame defining a space, a plurality of facilities inputs configured to receive facilities from a facilities supply, a plurality of facilities outputs configured to output the received facilities out of the module, and a plurality of facilities connection lines located at least partially within the space defined by the frame. The plurality of facilities connection lines connect the facilities inputs to the facilities outputs. The module further comprises a controller configured to control supply of facilities received at the facilities inputs out of the facilities outputs; and control operation of one or more vacuum pumping and/or abatement apparatuses remote from the module.

A semiconductor manufacturing apparatus includes: a stage installed inside a processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied.