Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

A method of optimising operating conditions in an abatement apparatus configured to treat an effluent stream from a processing tool and an abatement apparatus are disclosed. The method of optimising operating conditions in an abatement apparatus configured to treat an effluent stream from a processing tool comprises: determining a concentration of carbon monoxide produced by the abatement apparatus when treating the effluent stream; and adjusting an operating parameter of the abatement apparatus in response to the concentration of carbon monoxide. In this way, the performance of the abatement device can be controlled by simply adjusting the operating parameters of the abatement device in response to the amount of carbon monoxide being produced to create conditions within the abatement apparatus which improve the removal of compounds being treated within the abatement device, while reducing undesirable by-products and without requiring advanced knowledge of the content of the effluent stream.

A method for manufacturing a semiconductor device including a TiN film. The method comprises: supplying TiCl.sub.4 gas to a substrate; purging the TiCl.sub.4 gas; supplying NH.sub.3 gas to the substrate; purging the NH.sub.3 gas; and supplying an inhibitor that inhibits adsorption of TiCl.sub.4 or NH.sub.3 to the substrate. A plurality of cycles each including the supplying the TiCl.sub.4 gas, the purging the TiCl.sub.4 gas, the supplying the NH.sub.3 gas, and the purging the NH.sub.3 gas are performed, at least a part of the plurality of cycles includes the supplying the inhibitor, and after the supplying the inhibitor is performed, the supplying the TiCl.sub.4 gas or the supplying the NH.sub.3 gas is performed without purging the inhibitor, or, after purging the inhibitor for a shorter time than the purging the TiCl.sub.4 gas or the purging the NH.sub.3 gas, the supplying the TiCl.sub.4 gas or the supplying the NH.sub.3 gas is performed.

A sub-fab area installation apparatus includes: a vacuum pump configured to evacuate a processing gas from a processing chamber of the semiconductor manufacturing equipment; a cooling unit configured to cool a first circulation liquid used in the processing chamber; a heating unit configured to heat a second circulation liquid used in the processing chamber; and a cooling-liquid line configured to pass a cooling liquid therethrough. The cooling liquid is supplied from a cooling source. The cooling-liquid line includes: a distribution line configured to supply the cooling liquid to the vacuum pump and the cooling unit; and a merging return line configured to merge the cooling liquid that has passed through the vacuum pump and the cooling unit and return the cooling liquid to the cooling source.

A process for preparing a support comprises the placing of a substrate on a susceptor in a chamber of a deposition system, the susceptor having an exposed surface not covered by the substrate; the flowing of a precursor containing carbon in the chamber at a deposition temperature so as to form at least one layer on an exposed face of the substrate, while at the same time depositing species of carbon and of silicon on the exposed surface of the susceptor. The process also comprises, directly after the removal of the substrate from the chamber, a first etch step consisting of the flowing of an etch gas in the chamber at a first etching temperature not higher than the deposition temperature so as to eliminate at least some of the species of carbon and silicon deposited on the susceptor.

One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of Si.sub.vY.sub.wMg.sub.xAl.sub.yO.sub.z. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of Si.sub.vY.sub.wMg.sub.xAl.sub.yO.sub.z.

A method for preventing contamination of a base plate having a step of, after producing polycrystalline silicon in a reactor having the base plate and a lid covering the base plate, removing the lid from the base plate; and a step of isolating space including the base plate by an isolation device.

Embodiments of the present disclosure include methods and apparatuses utilized to reduce particle generation within a processing chamber. In one or more embodiments, a lid for a substrate processing chamber is provided and includes a cover member, a central opening, and a trench. An inner profile of the central opening contains a first section having a first diameter, a second section having a second diameter, and a third section having a third diameter. The second section is disposed between and connected to the first section and the third section. The first diameter gradually increases from the second section toward the surface of the cover member, the second diameter cylindrically extends from the first section to the third section, and the third diameter is less than the second diameter. The trench surrounds the central opening and is formed along a closed path in the surface of the cover member.

An atomic layer deposition method for depositing a film into surface features of a substrate is disclosed. The method may include the step of placing the substrate having surface features into a reactor. An organic passivation agent may be introduced into the 5 reactor, which may react with a portion of exposed hydroxyl radicals within the surface features. Subsequently, unreacted organic passivation agent may be purged, and then a precursor may be introduced. The precursor may react with the remaining exposed hydroxyl radicals that did not interact with the organic passivation agent. Subsequently, the unreacted precursor may be purged, and an oxygen source or a nitrogen source may 10 be introduced into the reactor to form a film within the surface features.