A plasma processing device includes: a plurality of processing chambers; a junction exhaust pipe into which a plurality of exhaust flow paths for evacuating interiors of the plurality of processing chambers joins; and a plurality of branch exhaust pipes disposed between the plurality of exhaust flow paths and the junction exhaust pipe and connecting the junction exhaust pipe to the plurality of exhaust flow paths, respectively, wherein each of the plurality of branch exhaust pipes includes a mechanism, which is disposed in a flow path of the branch exhaust pipe, to deactivate energy of hot electrons flowing through the flow path.

A chamber cleaning method in accordance with an exemplary embodiment includes a chamber stabilizing process for transporting a substrate, on which a thin film deposition process has been completed, out of a chamber and processing an inside of the chamber, wherein the chamber stabilizing process includes: a cleaning process for injecting a cleaning gas into the chamber and etching and cleaning byproducts generated by the thin film deposition; and a coating process for injecting a gas including at least one among aluminum (Al), zirconium (Zr) or hafnium (Hf) into the chamber, and generating a protective film on an inner wall of the chamber and at least one surface of components installed inside the chamber.

A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, where the shower head is coated with a hydrophobic film. A patterned photoresist layer is formed on the metal oxide film. The metal oxide film is patterned by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film. The target layer is patterned by using the patterned metal oxide film as a mask.

Described herein are methods of filling features with tungsten and related apparatus. The methods described herein involve deposition of a tungsten nucleation layer prior to deposition of a bulk layer. The methods involve multiple atomic layer deposition (ALD) cycles. According to various embodiments, both a boron-containing reducing agent and silicon-reducing agent may be pulses during a single cycle to react with a tungsten-containing precursor and form a tungsten film.

A cleaning method according to an aspect of the present disclosure includes: supplying a halogen-containing gas that does not contain fluorine to an interior of a processing container that is capable of being exhausted via an exhaust pipe to perform a cleaning; and supplying a fluorine-containing gas to at least one of the interior of the processing container and an interior of the exhaust pipe to perform the cleaning after the supplying the halogen-containing gas to perform the cleaning.

Systems and methods for cleaning a showerhead are described. One of the systems includes a support section and a press plate located above the support section to be supported by the support section. The system further includes a cleaning layer located above the press plate. The cleaning layer moves to clean a showerhead. The support section contacts an arm of a spindle assembly for movement with movement of the arm.

Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO.sub.2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

A CVD apparatus includes a chamber, a susceptor, an entry/takeout port for a substrate, and a gate valve provided at the entry/takeout port, in which the susceptor has a mounting plate and a support, the entry/takeout port is provided on a part of a side of the chamber, and is provided in a range from an inner bottom surface of the chamber to a position corresponding to the lower surface of the mounting plate when the susceptor is located at an upper end in the vertical direction, and the inner bottom surface of the chamber, the range from the inner bottom surface of the chamber to the position corresponding to the lower surface of the mounting plate when the susceptor is located at the upper end in the vertical direction, the lower surface of the mounting plate, and the outer side surface of the support are coated with ceramic liners.

Devices for deposition of material via organic vapor jet printing (OVJP) and similar techniques are provided. The depositor includes delivery channels ending in delivery apertures, where the delivery channels are flared as they approach the delivery apertures, and/or have a trapezoidal shape. The depositors are suitable for fabricating OLEDs and OLED components and similar devices.

Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.