A method of making a sealing article that includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.

Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.

In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

A thin film deposition system deposits a thin film on a substrate in a thin film deposition chamber. The thin film deposition system deposits the thin film by flowing a fluid into the thin film deposition chamber. The thin film deposition system includes a byproducts sensor that senses byproducts of the fluid in an exhaust fluid. The thin film deposition system adjusts the flow rate of the fluid based on the byproducts.

The invention provides an improved semiconductor deposition method, which comprises providing a deposition machine, the deposition machine includes a chamber connected with a pipeline, putting a first wafer into the chamber, and performing a pipeline cleaning step, the pipeline cleaning step includes: cutting off the path between the pipeline and the chamber by turning off a plurality of valve switches, and introducing a gas from the pipeline to move along a first path of the pipeline. Then, a deposition step is performed on the first wafer to deposit a first material layer on the surface of the first wafer, the deposition step includes opening a plurality of valve switches to communicate the path between the pipeline and the chamber, and introducing the gas into the chamber along a second path of the pipeline.

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Pump liners and process chambers with the pump liners are described. The pump liner has a ring-shaped body with an annular wall enclosing a process region. A plurality of circumferentially spaced openings provide fluid communication through the annular wall between the process region and a region outside of the ring-shaped body. Each of the plurality of circumferentially spaced openings has a self-adjusting valve assembly. Self-adjusting valves and processing methods are also described.

Urea (multi)-(meth)acrylate (multi)-silane precursor compounds, synthesized by reaction of (meth)acrylated materials having isocyanate functionality with aminosilane compounds, either neat or in a solvent, and optionally with a catalyst, such as a tin compound, to accelerate the reaction. Also described are articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one urea (multi)-(meth)acrylate (multi)-silane precursor compound synthesized by reaction of (meth)acrylated materials having isocyanate functionality with aminosilane compounds. The substrate may be a (co)polymer film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making the urea (multi)-(meth)acrylate (multi)-silanes and their use in composite films and electronic devices are described.

Urea (multi)-(meth)acrylate (multi)-silane precursor compounds, synthesized by reaction of (meth)acrylated materials having isocyanate functionality with aminosilane compounds, either neat or in a solvent, and optionally with a catalyst, such as a tin compound, to accelerate the reaction. Also described are articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one urea (multi)-(meth)acrylate (multi)-silane precursor compound synthesized by reaction of (meth)acrylated materials having isocyanate functionality with aminosilane compounds. The substrate may be a (co)polymer film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making the urea (multi)-(meth)acrylate (multi)-silanes and their use in composite films and electronic devices are described.