A controller includes an accumulation determiner configured to determine a first accumulation value that indicates an amount of accumulation of material on surfaces within a processing chamber and a pressure controller configured to obtain the first accumulation value, obtain at least one of a setpoint pressure an etching step and a duration of the etching step, and, to control the pressure within the processing chamber during the etching step, adjust a control parameter based on (i) the first accumulation value and (ii) the at least one of the setpoint pressure and the duration of the etching step.

The present invention relates to the unexpected discovery of novel methods of preparing nanodevices and/or microdevices with predetermined patterns. In one aspect, the methods of the invention allow for engineering structures and films with continuous thickness equal to or less than 50 nm.

A cutting tool includes a substrate and a coating film, wherein the coating film has a first layer formed from a plurality of hard grains, the hard grains are made of TiSiCN having a cubic crystal structure, the hard grains have a lamellar structure in which a layer having a relatively high silicon concentration and a layer having a relatively low silicon concentration are alternately stacked, and a maximum value of percentage of number A.sub.Si of silicon atoms to a sum of the number A.sub.Si of silicon atoms and number A.sub.Ti of titanium atoms in a grain boundary region between the hard grains, {A.sub.Si/(A.sub.Si+A.sub.Ti)}×100, is larger than an average value of percentage of number B.sub.Si of silicon atoms to a sum of the number B.sub.Si of silicon atoms and number B.sub.Ti of titanium atoms in the first layer, {B.sub.Si/(B.sub.Si+B.sub.Ti)}×100.

A cutting tool includes a substrate and a coating film, wherein the coating film has a first layer formed from a plurality of hard grains, the hard grains are made of TiSiCN having a cubic crystal structure, the hard grains have a lamellar structure in which a layer having a relatively high silicon concentration and a layer having a relatively low silicon concentration are alternately stacked, and a maximum value of percentage of number A.sub.Si of silicon atoms to a sum of the number A.sub.Si of silicon atoms and number A.sub.Ti of titanium atoms in a grain boundary region between the hard grains, {A.sub.Si/(A.sub.Si+A.sub.Ti)}×100, is larger than an average value of percentage of number B.sub.Si of silicon atoms to a sum of the number B.sub.Si of silicon atoms and number B.sub.Ti of titanium atoms in the first layer, {B.sub.Si/(B.sub.Si+B.sub.Ti)}×100.

Molybdenum-DAD precursors are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum-DAD precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum-DAD precursors are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum-DAD precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Disclosed is a coated ceramic fiber including a silicon carbide coating layer adjacent to the ceramic fiber and a silicon dioxide coating layer adjacent to the silicon carbide coating layer, wherein the silicon dioxide coating layer forms micro cracks after a crystal structure transformation. The coated ceramic fiber may be included in a composite material having a ceramic matrix.

Disclosed is a coated ceramic fiber including a silicon carbide coating layer adjacent to the ceramic fiber and a silicon dioxide coating layer adjacent to the silicon carbide coating layer, wherein the silicon dioxide coating layer forms micro cracks after a crystal structure transformation. The coated ceramic fiber may be included in a composite material having a ceramic matrix.

Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) ##STR00001##
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10, R.sup.11, and R.sup.12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

Provided is a method for making a porous graphene layer of a thickness of less than 100 nm, including the following steps: providing a catalytically active substrate, said catalytically active substrate on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; and chemical vapour deposition and formation of the porous graphene layer on the surface of the catalytically active substrate;. The catalytically active substrate is a copper-nickel alloy substrate with a copper content in the range of 98 to less than 99.96% by weight and a nickel content in the range of more than 0.04-2% by weight, the copper and nickel contents complementing to 100% by weight of the catalytically active substrate.