A catalytic chemical vapor deposition apparatus comprising a catalyst wire including a tantalum wire and a boride layer formed on a surface of the tantalum wire is used. The boride of the metal tantalum (tantalum boride) is harder than the metal tantalum. Therefore, by using the tantalum wire having the boride layer formed on the surface thereof as a catalyst wire, it is possible to reduce thermal expansion of the catalyst wire, improve mechanical strength, and prolong the service life. Further, by performing energization heating of the catalyst wire by continuous energization, it is further possible to prolong the service life of the catalyst wire.

A catalytic chemical vapor deposition apparatus comprising a catalyst wire including a tantalum wire and a boride layer formed on a surface of the tantalum wire is used. The boride of the metal tantalum (tantalum boride) is harder than the metal tantalum. Therefore, by using the tantalum wire having the boride layer formed on the surface thereof as a catalyst wire, it is possible to reduce thermal expansion of the catalyst wire, improve mechanical strength, and prolong the service life. Further, by performing energization heating of the catalyst wire by continuous energization, it is further possible to prolong the service life of the catalyst wire.

The present invention relates to metal oxide precursors comprising i) at least one metal atom selected from the group consisting of In, Ga, Zn and Sn, ii) at least one non-photocrosslinkable ligand and iii) at least one photocrosslinkable ligand, to liquid coating compositions comprising the precursors, and to their use.

The present invention relates to metal oxide precursors comprising i) at least one metal atom selected from the group consisting of In, Ga, Zn and Sn, ii) at least one non-photocrosslinkable ligand and iii) at least one photocrosslinkable ligand, to liquid coating compositions comprising the precursors, and to their use.

An aspect of the present disclosure is a method that includes combining a first organic salt (A.sup.1X.sup.1), a first metal salt) a second organic salt (A.sup.2X.sup.3), a second metal salt (M.sup.2Cl.sub.2), and a solvent to form a primary solution, where A.sup.1X.sup.1 and M.sup.1(X.sup.2).sub.2 are present in the primary solution at a first ratio between about 0.5 to 1.0 and about 1.5 to 1.0, and A.sup.2X.sup.3 to M.sup.2Cl.sub.2 are present in the primary solution at a second ratio between about 2.0 to 1.0 and about 4.0 to 1.0. In some embodiments of the present disclosure, at least one of A.sup.1 or A.sup.2 may include at least one of an alkyl ammonium, an alkyl diamine, cesium, and/or rubidium.

An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.

An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.

The present invention relates to a method for manufacturing a master mold, a master mold manufactured by the method, a method for manufacturing a transparent photomask, a transparent photomask manufactured by the method, and a method for manufacturing a conductive mesh pattern by using the transparent photomask.

A method for producing nanomaterial comprising carbon is disclosed. The method comprises introducing a combination of two or more carbon sources into a synthesis reactor; decomposing at least partially the two or more carbon sources in the synthesis reactor to release carbon from the two or more carbon sources; and synthesizing the nanomaterial comprising carbon from the released carbon in the synthesis reactor.

A method for producing nanomaterial comprising carbon is disclosed. The method comprises introducing a combination of two or more carbon sources into a synthesis reactor; decomposing at least partially the two or more carbon sources in the synthesis reactor to release carbon from the two or more carbon sources; and synthesizing the nanomaterial comprising carbon from the released carbon in the synthesis reactor.