C23C18/02

Thermally induced graphene sensing circuitry on intelligent valves, actuators, and pressure sealing applications

Thermally induced graphene sensing circuitry and methods for producing circuits from such thermally induced circuits are disclosed along with applications to hydrocarbon exploration and production, and related subterranean activities. The thermally induced graphene circuitry advantageously brings electrically interconnections otherwise absent on oilfield service tools, enabling components and tools to become smart.

METHOD FOR MANUFACTURING PEROVSKITE PHOTOVOLTAIC CELL AND PEROVSKITE PHOTOVOLTAIC CELL
20260114172 · 2026-04-23 · ·

The present disclosure provides means for manufacturing a perovskite photovoltaic cell with high conversion efficiency and high durability. One aspect of the present disclosure is a method for manufacturing a perovskite photovoltaic cell including: an application step of applying a precursor solution on a carrier transport layer, the precursor solution including a precursor substance that generates a perovskite-type crystal, an additive represented by Formula (I), and a solvent; and a heating step of performing a heat treatment on a precursor layer obtained in the application step to form a photoelectric conversion layer including a perovskite film. Another aspect of the present disclosure relates to a perovskite photovoltaic cell.

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METHOD FOR MANUFACTURING PEROVSKITE PHOTOVOLTAIC CELL AND PEROVSKITE PHOTOVOLTAIC CELL
20260114172 · 2026-04-23 · ·

The present disclosure provides means for manufacturing a perovskite photovoltaic cell with high conversion efficiency and high durability. One aspect of the present disclosure is a method for manufacturing a perovskite photovoltaic cell including: an application step of applying a precursor solution on a carrier transport layer, the precursor solution including a precursor substance that generates a perovskite-type crystal, an additive represented by Formula (I), and a solvent; and a heating step of performing a heat treatment on a precursor layer obtained in the application step to form a photoelectric conversion layer including a perovskite film. Another aspect of the present disclosure relates to a perovskite photovoltaic cell.

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Method for manufacturing a layer of multi-cation perovskite to form photo-active layer involving slot die coating or a blade coating of wet film, and sweeping of the wet film by flow of dry air or inert gas having specified speed, and application of heat treatment to substrate

A method for manufacturing a multi-cation perovskite layer, including: a) supply of a substrate having a deposition face, b) deposition of a precursor solution including precursors comprising CsX, FAY, PbZ.sub.2, with X, Y and ZI, Br, and an FACl additive, the molar ratio of cesium to lead is between approximately 4% and 22%, the molar ratio of FACl relative to lead between 0.1% and 5%, and the perovskite layer has an empirical formula of the type Cs.sub.xFA.sub.(1x+w)Pb(I.sub.yBr.sub.(1y)).sub.3 with x between 0.04 and 0.22, y between 0 and 1 and w between 0.001 and 0.05, c) sweeping of the wet film by an inert gas to crystallize the perovskite layer, and heat treatment so that the deposition face has a temperature ranging from about 25 C. to 80 C. C at least during step b).

Method for manufacturing a layer of multi-cation perovskite to form photo-active layer involving slot die coating or a blade coating of wet film, and sweeping of the wet film by flow of dry air or inert gas having specified speed, and application of heat treatment to substrate

A method for manufacturing a multi-cation perovskite layer, including: a) supply of a substrate having a deposition face, b) deposition of a precursor solution including precursors comprising CsX, FAY, PbZ.sub.2, with X, Y and ZI, Br, and an FACl additive, the molar ratio of cesium to lead is between approximately 4% and 22%, the molar ratio of FACl relative to lead between 0.1% and 5%, and the perovskite layer has an empirical formula of the type Cs.sub.xFA.sub.(1x+w)Pb(I.sub.yBr.sub.(1y)).sub.3 with x between 0.04 and 0.22, y between 0 and 1 and w between 0.001 and 0.05, c) sweeping of the wet film by an inert gas to crystallize the perovskite layer, and heat treatment so that the deposition face has a temperature ranging from about 25 C. to 80 C. C at least during step b).