Embodiments of the present disclosure provide for methods and systems for making structures using an electrospray system while under vacuum. In particular, embodiments of the present disclosure provide for methods and systems for ultra-fast growth of high aspect ratio nano/meso/micro-structures with three dimensional topological complexity and control of phase and composition of the structure formed.

The present invention relates to a novel process for the preparation of printable, high-viscosity oxide media, and to the use thereof in the production of solar cells.

The present application provides a method of fabricating a quantum dot color film substrate, red and green quantum dots are respectively formulating into red and green quantum dot inks, then formation is performed by an inkjet printing, and a color filter layer is obtained, thereby brightness and color saturation of displays can be increased; simultaneously, the red quantum dot ink and the green quantum dot ink at least have an ink of epoxy resin system therein, when the ink of epoxy resin system is yet cured, a graphene conductive layer is formed thereon to act as an electrode, so that a greatly improved adhesion of the graphene conductive layer and the color filter layer can be obtained. Additionally, to replace ITO by utilizing graphene as a conductive layer can alleviate current issues of few ITO sources and increasing price, and the graphene has conductivity and high transmittance that make display quality of TFT-LCD screen be guaranteed, and an overall thinned and lightened panel be achieved. Such design helps increasing conductivity and integrating benefits, and also has very great application prospect in curved panel market.

Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.

A method for providing electrically-conductive silver-containing metal in a thin film or one or more thin film patterns on a substrate. Electrically-conductive metallic silver is provided from a non-hydroxylic-solvent soluble silver complex represented by the following formula (I):
(Ag.sup.+).sub.a(L).sub.b(P).sub.c (I)
wherein L represents an -oxy carboxylate; P represents a 5- or 6-membered N-heteroaromatic compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2. A photosensitizer can also be present. The reducible silver ions in the photosensitive thin film or photosensitive thin film pattern can be photochemically converted to electrically-conductive metallic silver in the thin films or thin film patterns by irradiation with electromagnetic radiation having a wavelength within the range of at least 150 nm and up to and including 700 nm.

Provided is a barrier film, comprising: a base layer; and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, the first region has a thickness of 50 nm or more, and the ratio (d1/d2) of the thickness (d1) of the first region to the thickness (d2) of the second region is 2 or less, the barrier film having excellent barrier properties and optical properties. The barrier film can be used for electronic products sensitive to moisture or the like.

Provided is a barrier film, comprising: a base layer; and an inorganic layer including Si, N, and O, wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5?10.sup.?3 g/m.sup.2.Math.day as measured under conditions of a temperature of 38? C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.

Provided is a barrier film, comprising: a base layer; and an inorganic layer including Si, N, and O, wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5?10.sup.?3 g/m.sup.2.Math.day as measured under conditions of a temperature of 38? C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.

Provided is a barrier film, comprising a base layer and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer. The barrier film has excellent barrier properties and optical properties and can be used for electronic products which are sensitive to moisture and the like.

An apparatus, method, and system for post-processing a printed graphene ink pattern or other deposition on a substrate. A pulsed UV laser is tunable between various energy densities to selectively modify the printed ink or deposition in electrical or physical properties. In one example, radical improvements in electrical conductivity are achieved. In another example, controlled transformation from essentially 2D printed or deposited graphene to surface topology of 3D nanostructures are achieved. The 3D structures are beneficial in such applications as electrochemical sensors of different types and characteristics. In another example, hydrophobicity of the printed or deposited graphene can be manipulated starting from a hydrophilic to super hydrophobic surface.