The present invention relates to a process for the preparation of thin silver nano-particles containing layers, which are produced directly on a substrate as part of a coating or printing process. The layers can show different colours in transmittance and reflectance. The invention further relates to decorative and security elements. When the layers are applied over a security element, such as a hologram, the obtained products may show different colours in reflection and transmission, an extremely bright optically variable image (OVD image). Depending on the thickness of the layer a more or less intensive metallic aspect appears.

The present disclosure relates to a patternable process for coating functional and adherent graphene-like carbon on multiple substrate types using CO.sub.2 laser-induced photothermal pyrolysis in scanning mode. The poly furfuryl alcohol (PFA) synthesised via low-temperature polymerisation of furfuryl alcohol precursor without any additives was used to form graphene-like carbon material.

An apparatus for material deposition on an acceptor surface includes a transparent donor substrate having opposing first and second surfaces, such that at least a part of the second surface is not parallel to the acceptor surface, and including a donor film on the second surface. The apparatus additionally includes an optical assembly, which is configured to direct a beam of radiation to pass through the first surface of the donor substrate and impinge on the donor film at a location on the part of the second surface that is not parallel to the acceptor surface, so as to induce ejection of droplets of molten material from the donor film onto the acceptor surface.

Provided are a compound, including metal atoms for forming metal nano particles through a simple process within a short time at a low production cost for commercial purposes, and a solution including the compound.

Embodiments of the invention include a method of initiating an optical fiber of a tip assembly to form a finished tip assembly. In some embodiments, at least a portion of a distal portion of the optical fiber is coated with an energy absorbing initiating material. In some embodiments, the initiating material is an enamel material including a mixture of brass (copper and zinc) flakes or aluminum flakes in a solution of organic solvents. After the initiating material dries, a diode laser is fired through the optical fiber. The laser energy is at least partially absorbed in the initiating material and ignites the organic solvents. This combustion melts the material of the optical fiber, and impregnates the optical fiber with the metal flakes of the initiating material. The resulting initiated optical fiber is thus permanently modified so that the energy applied through the fiber is partially absorbed and converted to heat.

Embodiments of the invention include a method of initiating an optical fiber of a tip assembly to form a finished tip assembly. In some embodiments, at least a portion of a distal portion of the optical fiber is coated with an energy absorbing initiating material. In some embodiments, the initiating material is an enamel material including a mixture of brass (copper and zinc) flakes or aluminum flakes in a solution of organic solvents. After the initiating material dries, a diode laser is fired through the optical fiber. The laser energy is at least partially absorbed in the initiating material and ignites the organic solvents. This combustion melts the material of the optical fiber, and impregnates the optical fiber with the metal flakes of the initiating material. The resulting initiated optical fiber is thus permanently modified so that the energy applied through the fiber is partially absorbed and converted to heat.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A multilayer structure including a substrate and a first stack of a layer of SiO.sub.2 and a layer of material of the SiO.sub.xN.sub.yH.sub.z type positioned between the substrate and the layer of SiO.sub.2, in which the layer of SiO.sub.2 and the layer of material of the SiO.sub.xN.sub.yH.sub.z type have thicknesses (e.sub.B, e.sub.A) such that the thickness of the layer of SiO.sub.2 is less than or equal to 60 nm, the thickness of the layer of material of the SiO.sub.xN.sub.yH.sub.z type (e.sub.B) is more than twice the thickness (e.sub.A) of the layer of SiO.sub.2, and the sum of the thicknesses of the layer of SiO.sub.2 and of the layer of material of the SiO.sub.xN.sub.yH.sub.z type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.

A multilayer structure including a substrate and a first stack of a layer of SiO.sub.2 and a layer of material of the SiO.sub.xN.sub.yH.sub.z type positioned between the substrate and the layer of SiO.sub.2, in which the layer of SiO.sub.2 and the layer of material of the SiO.sub.xN.sub.yH.sub.z type have thicknesses (e.sub.B, e.sub.A) such that the thickness of the layer of SiO.sub.2 is less than or equal to 60 nm, the thickness of the layer of material of the SiO.sub.xN.sub.yH.sub.z type (e.sub.B) is more than twice the thickness (e.sub.A) of the layer of SiO.sub.2, and the sum of the thicknesses of the layer of SiO.sub.2 and of the layer of material of the SiO.sub.xN.sub.yH.sub.z type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.

A multilayer structure including a substrate and a first stack of a layer of SiO.sub.2 and a layer of material of the SiO.sub.xN.sub.yH.sub.z type positioned between the substrate and the layer of SiO.sub.2, in which the layer of SiO.sub.2 and the layer of material of the SiO.sub.xN.sub.yH.sub.z type have thicknesses (e.sub.B, e.sub.A) such that the thickness of the layer of SiO.sub.2 is less than or equal to 60 nm, the thickness of the layer of material of the SiO.sub.xN.sub.yH.sub.z type (e.sub.B) is more than twice the thickness (e.sub.A) of the layer of SiO.sub.2, and the sum of the thicknesses of the layer of SiO.sub.2 and of the layer of material of the SiO.sub.xN.sub.yH.sub.z type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.