A metal-plated carbon material includes: a carbon material; and a metal layer covering a surface of the carbon material, in which, in the metal layer, crystal grains forming the metal layer have an average crystal grain size of 110 nm or less. A method of manufacturing a metal-plated carbon material, includes: a metal complex fixation step of immersing a carbon material in a supercritical fluid or subcritical fluid containing an organometallic complex of a first metal; and a first energization deposition step of energizing the metal-complex-fixed carbon material in an electroless plating solution containing a second metal.

Methods of forming porous nano-scale or micro-scale structured materials and structured materials formed thereby. Such methods entail providing a donor material and reacting the donor material to form a compound that deposits on a surface of a substrate to produce nano-scale or micro-scale geometric features of the structured material. In particular embodiments, the donor material is in a solution and the reacting step is performed by contacting the surface of the substrate with the solution and directing heat through the solution onto the surface to locally heat a portion of the solution in contact therewith.

This invention is directed to a process of coating metal in a trivalent chromium conversion-electrolyte coating wherein the metal anode or cathode is subjected to a current density ranging up to about 3.0 amperes per square foot for a period ranging up to 60 minutes.

Thin glass-like ceramic films which possess organic or physically functional structures with thicknesses in the 15 to 500 nm range and bottom-up methods for their fabrication are described. SiO.sub.2-rich structures having gradient properties are formed from a silsesquioxane having an electronegative β substituent and at least one organofunctional silane or at least one metal alkoxide.

Embodiments of the present disclosure provide for methods and systems for making structures using an electrospray system while under vacuum. In particular, embodiments of the present disclosure provide for methods and systems for ultra-fast growth of high aspect ratio nano/meso/micro-structures with three dimensional topological complexity and control of phase and composition of the structure formed.

Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.

Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.

A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.

This invention is directed to a process of coating metal in a trivalent chromium conversion-electrolyte coating wherein the metal anode or cathode is subjected to a current density ranging up to about 3.0 amperes per square foot for a period ranging up to 60 minutes.

There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.