A metal material comprising: a base material; an oxide layer disposed on a surface of the base material; and a metal layer disposed on a surface of the oxide layer, wherein the base material includes aluminum, the oxide layer includes aluminum, nickel, and oxygen, the metal layer includes nickel, and an average thickness of the oxide layer is no less than 50 nm and no more than 250 nm.

A graphene reinforced aluminum matrix composite with high electrical conductivity and a preparation method thereof. The method includes: obtaining aluminum coated graphene powder by plating aluminum on a graphene surface, melting aluminum block into aluminum liquid, heating a mold to be lower than an aluminum melting point, alternately pouring the aluminum liquid and the aluminum coated graphene powder into the mold for layered casting to obtain a sandwich structure; extruding the sandwich structure into a rectangular test block and then heating to 500˜600° C., performing heat preservation for a preset time and performing forging treatment, and performing longitudinal cold deformation under inert gas to obtain the graphene reinforced aluminum matrix composite. The method can solve a problem that poor wettability of graphene and aluminum matrix, the graphene is evenly dispersed in the aluminum matrix, which can improve strength of the aluminum matrix and keep its high electrical conductivity.

A method of manufacturing an optical film includes providing a base film. The base film includes a substrate defining a first surface and a second surface. The base film also includes a plurality of structures defining an upper surface and at least one side surface extending from the corresponding upper surface to a base portion. The method also includes depositing a catalyst material on each of the plurality of structures and the base portion to form a catalyst layer thereon. The method further includes selectively removing the catalyst layer from the upper surface of each of the plurality of structures and the base portion while retaining an activity of the catalyst layer on the at least one side surface of each of the plurality of structures. The method includes forming a metallic layer on the at least one side surface of each of the plurality of structures.

A substrate having a recess, a diffusion barrier layer defining the recess, and a wiring exposed at a bottom of the recess is prepared. A metal ion, having a concentration not causing precipitation of a metal even when an electroless plating liquid comes into contact therewith, is attached to the diffusion barrier layer. The metal is precipitated in the recess by supplying the electroless plating liquid into the recess in a state that the metal ion is attached to the diffusion barrier layer.

In one example, an electronic device housing may include a substrate, a micro-arc oxidation layer formed on a surface of the substrate, and an electroless plating layer formed on the micro-arc oxidation layer. Example electroless plating layer may be one of an electroless tin plating layer and an electroless silver plating layer. Further, the electronic device housing may include an electrophoretic deposition layer formed on the electroless plating layer.

A method for manufacturing a wiring substrate includes forming a conductor layer including first and second pads, forming a resin insulating layer on the conductor layer, forming, in the insulating layer, a first opening exposing the first pad and a second opening exposing the second pad, forming a covering layer on the insulating layer such that the covering layer covers the first and second openings, forming a third opening in the covering layer such that the third opening communicates with the first opening and the first pad is exposed in the third opening, forming, on a surface of the first pad, a protective film formed of material different from material forming the conductor layer, removing the covering layer from the insulating layer, and forming a conductor post on the second pad such that the conductor post is formed of material that is same as the material forming the conductor layer.

A substrate processing method includes holding a substrate W by using a holder 52 configured to hold the substrate; supplying a plating liquid L onto a top surface of the held substrate; covering the substrate by using a cover body 6 before or after the supplying of the plating liquid; heating the plating liquid on the substrate by using a heating device 63 provided in the cover body, while keeping the substrate covered with the cover body; and supplying a cooling gas to a bottom surface of the substrate or the holder from below the substrate in the heating of the plating liquid.

Methods of treating metal nanocrystals are provided. In embodiments, such a method comprises exposing metal nanocrystals comprising a metal and characterized by at least one twinning boundary therein, to a plating solution comprising a reducing agent and coating metal cations comprising a different metal, under conditions to form a coating of the different metal on surfaces of the metal nanocrystals via electroless deposition by chemical reduction of the coating metal cations, thereby providing coated metal nanocrystals. Methods of forming bulk nanostructured metal alloys from the coated metal nanocrystals are also provided.

A circuit board is formed from a catalytic laminate having a resin rich surface with catalytic particles dispersed below a surface exclusion depth. Trace channels and apertures are formed into the catalytic laminate, electroless plated with a metal such as copper, filled with a conductive paste containing metallic particles, which are then melted to form traces. In a variation, multiple circuit board layers have channels formed into the surface below the exclusion depth, apertures formed, are electroless plated, and the channels and apertures filled with metal particles. Several such catalytic laminate layers are placed together and pressed together under elevated temperature until the catalytic laminate layers laminate together and metal particles form into traces for a multi-layer circuit board.

The problem of the present invention is to provide a plating stack (a stack of plating films) for applying on surface of conductor circuits or the like, the plating stack can maintain high bond strength when solder is bonded on that and can be produced stably.

In the method for producing a plating stack of the present invention, a plating layer A mainly composed of a second metal is deposited on an object to be plated S mainly composed of a first metal by a substitution reaction, then a plating layer B mainly composed of palladium is deposited on the plating layer A, and then a plating layer C mainly composed of nickel is deposited on the plating layer B by a redox reaction. The first metal is, for example, copper. The second metal is, for example, gold, platinum or silver.