Patent classifications
C23C18/54
Electroless Co—W plating film
An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 μm or more.
HIGH PURITY ALUMINUM COATING WITH ZINC SACRIFICIAL UNDERLAYER FOR ALUMINUM ALLOY FAN BLADE PROTECTION
A coating system for an aluminum component includes a substrate formed from an aluminum material, a zinc or zinc alloy sacrificial layer deposited on the substrate, and an aluminum coating deposited over the zinc or zinc alloy sacrificial layer.
HIGH PURITY ALUMINUM COATING WITH ZINC SACRIFICIAL UNDERLAYER FOR ALUMINUM ALLOY FAN BLADE PROTECTION
A coating system for an aluminum component includes a substrate formed from an aluminum material, a zinc or zinc alloy sacrificial layer deposited on the substrate, and an aluminum coating deposited over the zinc or zinc alloy sacrificial layer.
FILM FORMING METHOD AND FILM FORMING APPARATUS OF METAL PLATING FILM
A film forming method and a film forming apparatus of a metal plating film allowing suppressing damage of a porous film. A metal plating film on a surface of a metal substrate by solid substitution-type electroless plating method. The film forming method includes preparing the film forming apparatus that includes at least a bottom wall and a sidewall surrounding the bottom wall and that is provided with a housing space, the metal substrate disposed on the bottom surface inside the housing, the porous film disposed on the surface of the metal substrate, and an electroless plating solution housed in the housing space; and using the film forming apparatus, reducing metal ions derived from the electroless plating solution contained in the porous film, and depositing the metal ions on the surface of the metal substrate to form the metal plating film on the surface of the metal substrate.
PRINTING APPARATUS
A drying unit includes a first contact heating unit provided inside a housing, and a second contact heating unit provided downstream in a transport direction from the first contact heating unit inside the housing. The first contact heating unit includes a first contact heating surface configured to come into contact with a back surface of a medium after printing. The second contact heating unit includes a second contact heating surface configured to come into contact with the back surface of the medium after printing. The first contact heating surface is curved to have a shape protruding in a direction opposite to the second contact heating surface, and the second contact heating surface is curved to have a shape protruding in a direction opposite to the first contact heating surface. The first contact heating surface has a radius of curvature larger than that of the second contact heating surface.
PRINTING APPARATUS
A drying unit includes a first contact heating unit provided inside a housing, and a second contact heating unit provided downstream in a transport direction from the first contact heating unit inside the housing. The first contact heating unit includes a first contact heating surface configured to come into contact with a back surface of a medium after printing. The second contact heating unit includes a second contact heating surface configured to come into contact with the back surface of the medium after printing. The first contact heating surface is curved to have a shape protruding in a direction opposite to the second contact heating surface, and the second contact heating surface is curved to have a shape protruding in a direction opposite to the first contact heating surface. The first contact heating surface has a radius of curvature larger than that of the second contact heating surface.
Surface activated polymers
An aqueous composition for use in activating surface of polymers.
Method of manufacturing semiconductor device and method of laminating metal
A semiconductor device includes a semiconductor part; an electrode selectively provided on the semiconductor part, the electrode being electrically connected to the semiconductor part; and multiple metal layers provided on the electrode. A method of manufacturing the semiconductor device includes selectively forming a first metal layer on the electrode; forming a palladium layer on the first metal layer, the palladium layer covering the first metal layer; forming a second metal layer on the palladium layer, the second metal layer covering the palladium layer; and forming a gold layer directly on the palladium layer by replacing the second metal layer with the gold layer.
Electrochemical doping of thin metal layers employing underpotential deposition and thermal treatment
A method is provided, including the following operations: depositing a liner in a feature of a substrate; depositing a monolayer of zinc over the liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.
Electrochemical doping of thin metal layers employing underpotential deposition and thermal treatment
A method is provided, including the following operations: depositing a liner in a feature of a substrate; depositing a monolayer of zinc over the liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.