C23C18/54

Light-directed electrochemical patterning of copper structures

A method creating a patterned film with cuprous oxide and light comprising the steps of electrodepositing copper from a solution onto a substrate; illuminating selected areas of said deposited copper with light having photon energies above the band gap energy of 2.0 eV to create selected illuminated sections and non-illuminated sections; and stripping non-illuminated sections leaving said illuminated sections on the substrate. An additional step may include galvanically replacing the copper with one or more noble metals.

REFERENCE ELECTRODE FOR ON-BOARD BATTERY CELL DIAGNOSTICS AND METHOD OF REFERENCE ELECTRODE FABRICATION

A reference electrode assembly for an electrochemical cell includes a separator constructed from an electrically-insulating porous material. The reference electrode assembly also includes a current collector having a sputtered electrically-conducting porous layer arranged directly on the separator and a sputtered lithium iron phosphate (LFP) layer arranged directly on the electrically-conducting porous layer. The reference electrode assembly additionally includes an electrical contact connected to the current collector. A method using successive vacuum deposition of individual layers onto the separator is employed in fabricating the reference electrode assembly.

REFERENCE ELECTRODE FOR ON-BOARD BATTERY CELL DIAGNOSTICS AND METHOD OF REFERENCE ELECTRODE FABRICATION

A reference electrode assembly for an electrochemical cell includes a separator constructed from an electrically-insulating porous material. The reference electrode assembly also includes a current collector having a sputtered electrically-conducting porous layer arranged directly on the separator and a sputtered lithium iron phosphate (LFP) layer arranged directly on the electrically-conducting porous layer. The reference electrode assembly additionally includes an electrical contact connected to the current collector. A method using successive vacuum deposition of individual layers onto the separator is employed in fabricating the reference electrode assembly.

Chemical evaporation control system

An apparatus is provided. The apparatus may include one or more of a container, a first magnet assembly, and a second magnet assembly. The container includes an open top and is configured to hold a liquid chemical solution. The first magnet assembly includes a first magnet having a first polarity and a cover, coupled to the first magnet. The cover is configured to be movable between an open and a closed position and limit evaporation of the solution when the cover is in the closed position. The second magnet assembly includes a second magnet having a second polarity. In response to a command, the second magnet assembly is configured to move the cover to the open position without direct contact to the first magnet assembly in response to a command.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A package including a first carrier, a seed layer, wires, a die and a molding material is provided. The first carrier is removed to expose the seed layer after disposing a second carrier on the molding material, then the seed layer is removed to expose the wires, and a gold layer is deposited on each of the wires by immersion gold plating, finally a semiconductor device is obtained. The gold layer is provided to protect the wires from oxidation and improve solder joint reliability.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A package including a first carrier, a seed layer, wires, a die and a molding material is provided. The first carrier is removed to expose the seed layer after disposing a second carrier on the molding material, then the seed layer is removed to expose the wires, and a gold layer is deposited on each of the wires by immersion gold plating, finally a semiconductor device is obtained. The gold layer is provided to protect the wires from oxidation and improve solder joint reliability.

Method for fabricating terminal electrode of multilayer ceramic capacitor having inner electrodes printed on full area together with protective layers
11810720 · 2023-11-07 · ·

A method is provided for fabricating a terminal electrode. The terminal electrode is applied on a multilayer ceramic capacitor (MLCC). The method prints inner electrodes on full area together with protective layers. The MLCC uses the thickness of thinned dielectric ceramic layers and the stacking of nickel inner-electrode layers. High capacitance is achieved at ends and sides with high electrode-to-ceramic ratios. Thus, the present invention uses a coating technology of ultra-low-temperature electrochemical deposition to fabricate low internal-stress MLCC terminal electrodes together with insulating protective layers for improving MLCC yield while cost reduced.

Method for fabricating terminal electrode of multilayer ceramic capacitor having inner electrodes printed on full area together with protective layers
11810720 · 2023-11-07 · ·

A method is provided for fabricating a terminal electrode. The terminal electrode is applied on a multilayer ceramic capacitor (MLCC). The method prints inner electrodes on full area together with protective layers. The MLCC uses the thickness of thinned dielectric ceramic layers and the stacking of nickel inner-electrode layers. High capacitance is achieved at ends and sides with high electrode-to-ceramic ratios. Thus, the present invention uses a coating technology of ultra-low-temperature electrochemical deposition to fabricate low internal-stress MLCC terminal electrodes together with insulating protective layers for improving MLCC yield while cost reduced.

Electroless plating solution and electroless plating method for recovering precious metal adsorbed on porous porphyrin polymer

The present invention relates to a method for recovering a precious metal selectively adsorbed on a porous porphyrin polymer, and to an electroless plating method capable of recovering a precious metal in a film form by desorbing and leaching the precious metal without an additional oxidizing agent and using same as a plating solution to reduce the precious metal on the surface of a substrate without an additional reducing agent.

Plating method and plating apparatus

A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.