An apparatus and a method for manufacturing a continuous reactor type core-shell catalyst electrode, which may manufacture a large amount of continuous reactor type core-shell catalyst electrodes by improving coating efficiency of shell metal by using reaction chambers disposed in a circular shape or in a line are provided. The apparatus for manufacturing a continuous reactor type core-shell catalyst electrode includes: a main body; reaction chambers which are disposed plurally in a circular shape inside the main body, store reaction solution inside thereof, are equipped with a movable member and counter electrodes, and are coupled with a reference electrode to a lateral portion thereof; a palladium sheet which is moved by the movable member and immersed in the reaction solution as the movable member moves downward; a power supply which applies a voltage to the electrodes.

A steering wheel hands off detection (HOD) cover may include a HOD pad having a fabric made of a non-woven fabric or a foam sponge of a non-woven fabric. A conductive plating surface of the fabric may be surface plated and on which sensing responses occur with respect to a contact state (hands ON) and a non-contact state (hands OFF) due to a physical contact.

A steering wheel hands off detection (HOD) cover may include a HOD pad having a fabric made of a non-woven fabric or a foam sponge of a non-woven fabric. A conductive plating surface of the fabric may be surface plated and on which sensing responses occur with respect to a contact state (hands ON) and a non-contact state (hands OFF) due to a physical contact.

Even when a stress is applied due to energization or switching operation, a connection state of electrode layers can be appropriately maintained. A semiconductor device includes a semiconductor layer of first conductivity type, an upper surface structure formed on a surface layer of the semiconductor layer, and an upper surface electrode formed over the upper surface structure. The upper surface electrode includes a first electrode formed on an upper surface of the semiconductor layer, and a second electrode formed over an upper surface of the first electrode. The first concave portion is formed on the upper surface of the first electrode. A side surface of the first concave portion has a tapered shape. The second electrode is formed over the upper surface of the first electrode including an inside of the first concave portion.

A method for coating an interconnect for a solid oxide cell (SOC) stack comprises providing an interconnect substrate comprising Cr and Fe, coating the interconnect substrate with a first metallic layer by electrodeposition, coating the resulting structure with a second layer of metallic cobalt by electrodeposition and coating the resulting structure with a layer of metallic copper by ion-exchange plating. This way, a metallic copper-cobalt coating is formed on the interconnect.

A method for coating an interconnect for a solid oxide cell (SOC) stack comprises providing an interconnect substrate comprising Cr and Fe, coating the interconnect substrate with a first metallic layer by electrodeposition, coating the resulting structure with a second layer of metallic cobalt by electrodeposition and coating the resulting structure with a layer of metallic copper by ion-exchange plating. This way, a metallic copper-cobalt coating is formed on the interconnect.

According to an embodiment, a method of forming a porous layer includes forming a porous layer containing a noble metal on a surface made of a semiconductor by displacement plating. The plating solution used in the displacement plating contains a noble metal source, hydrogen fluoride, and an adjusting agent adjusting a pH value or zeta potential. The noble metal source produces an ion containing the noble metal in water. The plating solution has a pH value in a range of 1 to 6.

A method for producing a hollow structure useful as a base material for a heat sink or the like which increases a heat dissipation property of devices mounted in various kinds of electronic apparatuses, without sacrificing downsizing, thinning, weight reduction, and multifunctionality, and provides a hollow structure. The method including: producing a plated composite by coating a surface of a core made of aluminum to form a copper plating layer; cutting off part of the plated composite to expose cut surfaces of the core; and turning a part corresponding to the core into a hollow part by immersing the plated composite in a sodium solution which dissolves aluminum but does not dissolve copper and selectively dissolving and removing only the aluminum, thereby producing a hollow structure whose skeletal part is composed of all copper plating layers.

A needle-shaped body protrudes from a cantilever made of Si. Furthermore, the rear face of the cantilever is coated with aluminum (first metal) having a Fermi level higher than that of Si. The cantilever is dipped into an aqueous silver nitride solution containing the ions of Ag serving as a second metal. The electrons of Si flow out to the aqueous silver nitride solution due to the existence of the aluminum, and Ag nanostructures are precipitated at the tip end of the needle-shaped body. A probe for tip-enhanced Raman scattering in which the Ag nanostructures are fixed to the tip end of the needle-shaped body is manufactured. The sizes and shapes of the Ag nanostructures can be controlled properly by adjusting the concentration of the aqueous silver nitride solution and the time during which the cantilever is dipped into the aqueous silver nitride solution.

A needle-shaped body protrudes from a cantilever made of Si. Furthermore, the rear face of the cantilever is coated with aluminum (first metal) having a Fermi level higher than that of Si. The cantilever is dipped into an aqueous silver nitride solution containing the ions of Ag serving as a second metal. The electrons of Si flow out to the aqueous silver nitride solution due to the existence of the aluminum, and Ag nanostructures are precipitated at the tip end of the needle-shaped body. A probe for tip-enhanced Raman scattering in which the Ag nanostructures are fixed to the tip end of the needle-shaped body is manufactured. The sizes and shapes of the Ag nanostructures can be controlled properly by adjusting the concentration of the aqueous silver nitride solution and the time during which the cantilever is dipped into the aqueous silver nitride solution.