A semiconductor device includes a semiconductor part; an electrode selectively provided on the semiconductor part, the electrode being electrically connected to the semiconductor part; and multiple metal layers provided on the electrode. A method of manufacturing the semiconductor device includes selectively forming a first metal layer on the electrode; forming a palladium layer on the first metal layer, the palladium layer covering the first metal layer; forming a second metal layer on the palladium layer, the second metal layer covering the palladium layer; and forming a gold layer directly on the palladium layer by replacing the second metal layer with the gold layer.

An electroless process for depositing gold (Au.sup.0) from a solution, comprising allowing gold (Au.sup.0) place from a solution of gold thiocyanate complex dissolved in a mixture of water-miscible organic solvent and water, or the deposition of gold (Au.sup.0) takes place on a deposition-directing layer comprising positively charged organic groups, said layer being provided on at least a portion of a surface of a substrate sought to be gold-coated.

An electroless process for depositing gold (Au.sup.0) from a solution, comprising allowing gold (Au.sup.0) place from a solution of gold thiocyanate complex dissolved in a mixture of water-miscible organic solvent and water, or the deposition of gold (Au.sup.0) takes place on a deposition-directing layer comprising positively charged organic groups, said layer being provided on at least a portion of a surface of a substrate sought to be gold-coated.

Provided are a magnetic disk and a method of fabricating the magnetic disk. The magnetic disk includes an aluminum alloy plate fabricated by a process involving a CC method and a compound removal process, and an electroless NiP plating layer disposed on the surface of the plate. The aluminum alloy plate is composed of an aluminum alloy containing 0.4 to 3.0 mass % (hereinafter abbreviated simply as %) of Fe, 0.1% to 3.0% of Mn, 0.005% to 1.000% of Cu, 0.005% to 1.000% of Zn, with a balance of Al and unavoidable impurities. In the magnetic disk, the maximum amplitude of waviness in a wavelength range of 0.4 to 5.0 mm is 5 nm or less, and the maximum amplitude of waviness in a wavelength range of 0.08 to 0.45 mm is 1.5 nm or less.

This disclosure provides a method for forming a plating film capable of suppressing deterioration of a plating solution, and a film formation device. The embodiment is a method for forming a metal plating film on a metal substrate by a substitution-type electroless plating method. The method includes bringing a porous film containing an electroless plating solution into contact with a surface of the metal substrate, and the porous film has an anionic group.

A lead-frame structure having two faces and exposing a treated silver surface on at least one of said two faces, the treated silver surface(s) serving the wire bonding, which lead-frame structure has a surface which, after applying resin to it, has excellent adhesion even under severe testing conditions, such as the IPC/JEDEC J-STD-20 MSL standard, and a surface mount electronic device comprising a lead-frame or lead-frame entity and at least one semiconductor device mounted thereon, wherein the lead-frame or lead-frame entity exposes a treated silver surface on at least one of the two faces thereof, wherein the treated silver surface(s) serve(s) the wire bonding, and wherein a resin is applied to the lead-frame or lead-frame entity, and which surface mount electronic device has excellent adhesion of the surface of the lead-frame or lead-frame entity even under severe testing conditions.

A lead-frame structure having two faces and exposing a treated silver surface on at least one of said two faces, the treated silver surface(s) serving the wire bonding, which lead-frame structure has a surface which, after applying resin to it, has excellent adhesion even under severe testing conditions, such as the IPC/JEDEC J-STD-20 MSL standard, and a surface mount electronic device comprising a lead-frame or lead-frame entity and at least one semiconductor device mounted thereon, wherein the lead-frame or lead-frame entity exposes a treated silver surface on at least one of the two faces thereof, wherein the treated silver surface(s) serve(s) the wire bonding, and wherein a resin is applied to the lead-frame or lead-frame entity, and which surface mount electronic device has excellent adhesion of the surface of the lead-frame or lead-frame entity even under severe testing conditions.

A method and a turbine part having a coating with a matrix layer that includes a high temperature resistant hydrophobic polysiloxane filler, wherein the coating has superior mechanical strength and temperature resistance.

A method and a turbine part having a coating with a matrix layer that includes a high temperature resistant hydrophobic polysiloxane filler, wherein the coating has superior mechanical strength and temperature resistance.

A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.