C23C18/54

Plating method and plating apparatus

A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.

Aluminum plate and method for manufacturing aluminum plate
10862133 · 2020-12-08 · ·

An object is to provide an aluminum plate having favorable coating properties and favorable adhesiveness to active materials and a method for manufacturing an aluminum plate. The aluminum plate having a plurality of through holes that penetrate in a thickness direction includes through holes A which have an average opening diameter of the through holes of 0.1 m or more and less than 100 m and have a shape in which a maximum diameter Ra is formed inside and the maximum diameter Ra and a minimum diameter Rb satisfy 1>Rb/Ra0.1.

Aluminum plate and method for manufacturing aluminum plate
10862133 · 2020-12-08 · ·

An object is to provide an aluminum plate having favorable coating properties and favorable adhesiveness to active materials and a method for manufacturing an aluminum plate. The aluminum plate having a plurality of through holes that penetrate in a thickness direction includes through holes A which have an average opening diameter of the through holes of 0.1 m or more and less than 100 m and have a shape in which a maximum diameter Ra is formed inside and the maximum diameter Ra and a minimum diameter Rb satisfy 1>Rb/Ra0.1.

Method of manufacturing hybrid metal foams

A method of electroplating a metal foam includes placing a metal foam to be plated into an electroplating chamber with a plating material source, circulating an electrolyte through the chamber to carry metal ions from the plating material source, the circulating being selected and controlled to produce an even coating of plating material on surfaces of the metal foam.

Method of manufacturing hybrid metal foams

A method of electroplating a metal foam includes placing a metal foam to be plated into an electroplating chamber with a plating material source, circulating an electrolyte through the chamber to carry metal ions from the plating material source, the circulating being selected and controlled to produce an even coating of plating material on surfaces of the metal foam.

ALUMINUM-ALLOY SUBSTRATE FOR MAGNETIC DISK, METHOD FOR MANUFACTURING SAME AND MAGNETIC DISK EMPLOYING SAID ALUMINUM-ALLOY SUBSTRATE FOR MAGNETIC DISK

Provided is an aluminum alloy substrate for a magnetic disk that includes an aluminum alloy containing 0.4 to 3.0 mass % (hereinafter abbreviated as %) of Fe, 0.005% to 1.000% of Cu, and 0.005% to 1.000% of Zn, with a balance of Al and unavoidable impurities. This substrate has a ratio A/B of 0.70 or more, where A indicates a distribution density of AlFe intermetallic compound particles having maximum diameters of 10 m or more and less than 16 m, and B indicates a distribution density of AlFe intermetallic compound particles having maximum diameters of 10 m or more. The distribution density of AlFe intermetallic compound particles having maximum diameters of 40 m or more is at most one per square millimeter. Also provided are a method of fabricating this aluminum alloy substrate for a magnetic disk and a magnetic disk composed of the aluminum alloy substrate for a magnetic disk.

Light-Directed Electrochemical Patterning of Copper Structures

A method creating a patterned film with cuprous oxide and light comprising the steps of electrodepositing copper from a solution onto a substrate; illuminating selected areas of said deposited copper with light having photon energies above the band gap energy of 2.0eV to create selected illuminated sections and non-illuminated sections; and stripping non-illuminated sections leaving said illuminated sections on the substrate. An additional step may include galvanically replacing the copper with one or more noble metals.

Conducting member for fuel cells, fuel cell, fuel cell stack, and method of producing conducting member for fuel cells

Provided are conducting members for fuel cells obtained by applying a protective film forming agent to a surface-treated base material having a base material and at least one alloy plating layer formed on the base material in order to form a protective film on the alloy plating layer, and thereafter subjecting the surface-treated base material to an acid treatment. In the conducting members for fuel cells of the present invention, the protective film forming agent preferably contains a mixture of a compound having a thiol group and an azole-based compound, and/or an azole-based compound having a thiol group. In the conducting members for fuel cells of the present invention, the acid treatment is preferably a treatment using sulfuric acid or nitric acid.

Conducting member for fuel cells, fuel cell, fuel cell stack, and method of producing conducting member for fuel cells

Provided are conducting members for fuel cells obtained by applying a protective film forming agent to a surface-treated base material having a base material and at least one alloy plating layer formed on the base material in order to form a protective film on the alloy plating layer, and thereafter subjecting the surface-treated base material to an acid treatment. In the conducting members for fuel cells of the present invention, the protective film forming agent preferably contains a mixture of a compound having a thiol group and an azole-based compound, and/or an azole-based compound having a thiol group. In the conducting members for fuel cells of the present invention, the acid treatment is preferably a treatment using sulfuric acid or nitric acid.

PLATING FOR THERMAL MANAGEMENT

Described examples include a process that includes forming a diffusion barrier layer on a backside of a semiconductor wafer. The process also includes forming a seed copper layer on the diffusion barrier layer. The process also includes forming a copper layer on the seed copper layer. The process also includes immersion plating a silver layer on the copper layer.