Provided is a device and a method for forming a metal plating film having a thick film thickness by a solid substitution-type electroless plating method. The present disclosure relates to a film formation device for forming a film of a first metal on a plating film of a second metal by a solid substitution-type electroless plating method, comprising: a conductive mounting base; a third metal; an insulating material; a microporous membrane; a plating bath chamber; and a pressing unit, wherein the third metal has an ionization tendency larger than ionization tendencies of the first metal and the second metal, and wherein the insulating material is installed between a base material and the third metal so as to contact respective materials of the base material and the third metal when the base material having the plating film of the second metal is installed.

The present invention relates to a method for recovering a precious metal selectively adsorbed on a porous porphyrin polymer, and to an electroless plating method capable of recovering a precious metal in a film form by desorbing and leaching the precious metal without an additional oxidizing agent and using same as a plating solution to reduce the precious metal on the surface of a substrate without an additional reducing agent.

Provided is a method for manufacturing a wiring board that forms a wiring layer having favorable adhesion without a resin resist pattern. A method prepares a substrate with seed-layer including: a underlayer on the surface of an insulating substrate; and a seed layer on the surface of the underlayer, the seed layer having a predetermined pattern and containing metal; presses a solid electrolyte membrane against the seed layer and the underlayer, and applies voltage between an anode and the underlayer to reduce metal ions in the membrane and form a metal layer on the surface of the seed layer; and removes an exposed region without the seed layer and the metal layer of the underlayer to form a wiring layer including the underlayer, the seed layer and the metal layer on the surface of the substrate.

A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material.

The present invention is to provide a microstructure capable of improving the withstand voltage of an insulating substrate while securing fine conductive paths, a multilayer wiring board, a semiconductor package, and a microstructure manufacturing method. The microstructure of the present invention has an insulating substrate having a plurality of through holes, and conductive paths consisting of a conductive material containing metal filling the plurality of through holes, in which an average opening diameter of the plurality of through holes is 5 nm to 500 nm, an average value of the shortest distances connecting the through holes adjacent to each other is 10 nm to 300 nm, and a moisture content is 0.005% or less with respect to the total mass of the microstructure.

A method for fabricating a sensor includes coating an end-polished sapphire fiber with aluminum to produce a sapphire fiber having an aluminum coating, anodizing the aluminum coating to produce an aluminum oxide coating, and removing the aluminum oxide coating from a distal end of the sapphire fiber.

A copper-coated palladium-containing particle dispersion in which copper-coated palladium-containing particles, which are obtained by coating surfaces of palladium-containing particles with copper, are dispersed is prepared, a platinum ion-containing solution is prepared, and a shell is formed by mixing the copper-coated palladium-containing particle dispersion and the platinum ion-containing solution with each other in a microreactor to displace copper of the copper-coated palladium-containing particle surfaces with platinum. The microreactor includes at least a first supply flow path, a second supply flow path, a joint portion in which the first supply flow path and the second supply flow path are joined to each other, and a discharge flow path. An orifice portion is provided midway in the discharge flow path. A pressure applied to the orifice portion in the displacement step is 2 MPa or higher.

A copper-coated palladium-containing particle dispersion in which copper-coated palladium-containing particles, which are obtained by coating surfaces of palladium-containing particles with copper, are dispersed is prepared, a platinum ion-containing solution is prepared, and a shell is formed by mixing the copper-coated palladium-containing particle dispersion and the platinum ion-containing solution with each other in a microreactor to displace copper of the copper-coated palladium-containing particle surfaces with platinum. The microreactor includes at least a first supply flow path, a second supply flow path, a joint portion in which the first supply flow path and the second supply flow path are joined to each other, and a discharge flow path. An orifice portion is provided midway in the discharge flow path. A pressure applied to the orifice portion in the displacement step is 2 MPa or higher.

Metal nanowires with uniform noble metal coatings are described. Two methods, galvanic exchange and direct deposition, are disclosed for the successful formation of the uniform noble metal coatings. Both the galvanic exchange reaction and the direct deposition method benefit from the inclusion of appropriately strong binding ligands to control or mediate the coating process to provide for the formation of a uniform coating. The noble metal coated nanowires are effective for the production of stable transparent conductive films, which may comprise a fused metal nanostructured network.

Metal nanowires with uniform noble metal coatings are described. Two methods, galvanic exchange and direct deposition, are disclosed for the successful formation of the uniform noble metal coatings. Both the galvanic exchange reaction and the direct deposition method benefit from the inclusion of appropriately strong binding ligands to control or mediate the coating process to provide for the formation of a uniform coating. The noble metal coated nanowires are effective for the production of stable transparent conductive films, which may comprise a fused metal nanostructured network.