Provided is a method for fabricating a magnesium-containing electrode by a plating method. In the fabrication process disclosure, a plating solution used in the plating method includes a solvent containing an ether. The solvent includes a first magnesium salt having a disilazide structure represented by a formula (R.sub.3Si).sub.2N and a second magnesium salt that does not have a disilazide structure. In the formula, R represents a hydrocarbon group having 1 or more and 10 or less carbon atoms.

Compositions and methods for silver plating onto metal surfaces such as PWBs in electronics manufacture to produce a silver plating which is greater than 80 atomic % silver, tarnish resistant, and has good solderability.

Compositions and methods for silver plating onto metal surfaces such as PWBs in electronics manufacture to produce a silver plating which is greater than 80 atomic % silver, tarnish resistant, and has good solderability.

Provided is a silicon bulk thermoelectric conversion material in which thermoelectric performance is improved by reducing the thermal conductivity as compared with the prior art. In the silicon bulk thermoelectric conversion material, the ZT is greater than 0.2 at room temperature with the elemental silicon. In the silicon bulk thermoelectric conversion material, a plurality of silicon grains have an average of 1 nm or more and 300 nm or less, a first hole have an average of 1 nm or more and 30 nm or less present in the plurality of silicon grains and surfaces of the silicon grains, and a second hole have an average of 100 nm or more and 300 nm or less present between the plurality of silicon grains, wherein the aspect ratio of a crystalline silicon grain is less than 10.

The present invention relates to a method for treating a metal surface, comprising (A) providing an ionic liquid solution and a substrate of a first metal, wherein the ionic liquid solution comprises an ionic liquid and an ion of a second metal; and (B) immersing the substrate of the first metal in the ionic liquid solution to form a coating layer of the second metal on a surface of the substrate of the first metal by reducing the ion of the second metal. The surface of the substrate of the first metal is protected by the coating layer of the second metal, thereby improving the corrosion resistance.

The present invention relates to a method for treating a metal surface, comprising (A) providing an ionic liquid solution and a substrate of a first metal, wherein the ionic liquid solution comprises an ionic liquid and an ion of a second metal; and (B) immersing the substrate of the first metal in the ionic liquid solution to form a coating layer of the second metal on a surface of the substrate of the first metal by reducing the ion of the second metal. The surface of the substrate of the first metal is protected by the coating layer of the second metal, thereby improving the corrosion resistance.

A copper plating solution includes: water-soluble copper salt; ethylenediamine; at least one of EDTA, a substituted derivative of EDTA, an ethylenediamine derivative, or glycine; and at least one of hydantoin or a substituted derivative thereof. The copper plating solution allows an aluminum or aluminum alloy base to be displacement-plated with copper.

A printed circuit board has a double-sided substrate with an insulation layer, a bonding member, a base layer of an aluminum material, and a circuit pattern; a second insulation layer; a second bonding member; a second base layer; a through hole; a zinc substitution layer; a plating layer; and a second circuit pattern.

A printed circuit board has a double-sided substrate with an insulation layer, a bonding member, a base layer of an aluminum material, and a circuit pattern; a second insulation layer; a second bonding member; a second base layer; a through hole; a zinc substitution layer; a plating layer; and a second circuit pattern.

A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.