A coated tool according to the present disclosure includes a base member and a coating layer located on the base member. The coating layer includes a first peak located in a range of 15° to 30° and a second peak located in a range of 60° to 75° in a distribution of X-ray intensity indicated at a axis of a pole figure, the X-ray intensity regarding a plane of the cubic crystal. The coating layer includes a valley part between the first peak and the second peak, and the valley part includes the X-ray intensity smaller than the X-ray intensity at each of the first peak and the second peak. The X-ray intensity at the first peak is 0.7 times or greater of the X-ray intensity at the second peak.

A coated tool includes a base and a coating layer on the base. The coating layer includes a first layer including Al.sub.2O.sub.3 particles, and a second layer on the first layer. The second layer includes, sequentially from the base, a first film, a second film in contact with the first film, and a third film in contact with the second film. The first to third films individually include Ti. The first film, the second film and the third film individually include at least one kind selected from C and N. The coated tool satisfies a relationship of a first N content>a third N content>a second N content, in which the first N content is an N content in the first film, the second N content is an N content in the second film, and the third N content is an N content in the third film.

A coated tool may include a base member and a coating layer located on the base member. The coating layer may include a first section located on the base member and a second section located on the first section. The first section may include an AlTi portion including aluminum and titanium, and an AlCr portion including aluminum and chromium, and each of the AlTi portion and the AlCr portion may be in contact with the base member. The second section may include a plurality of AlTi layers including aluminum and titanium, and a plurality of AlCr layers including aluminum and chromium, and the AlTi layers and the AlCr layers may be located alternately one upon another.

Various embodiments herein relate to electrochromic devices, methods of fabricating electrochromic devices, and apparatus for fabricating electrochromic devices. In a number of cases, the electrochromic device may be fabricated to include a particular counter electrode material. The counter electrode material may include a base anodically coloring material. The counter electrode material may further include one or more halogens. The counter electrode material may also include one or more additives.

Various embodiments herein relate to electrochromic devices, methods of fabricating electrochromic devices, and apparatus for fabricating electrochromic devices. In a number of cases, the electrochromic device may be fabricated to include a particular counter electrode material. The counter electrode material may include a base anodically coloring material. The counter electrode material may further include one or more halogens. The counter electrode material may also include one or more additives.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

Disclosed is a LiDAR window integrated optical filter that includes a window of a polymer material for absorbing a visible light band and transmitting a near-infrared band; and an upper reflective layer and a lower reflective layer formed on the upper surface and the lower surface of the window. The upper reflective layer and the lower reflective layer may be formed in a thin film including titanium dioxide (TiO.sub.2) and silicon dioxide (SiO.sub.2).

A surface coated cutting tool comprises: a tool substrate and a coating layer on a surface of the tool substrate; wherein the coating layer comprises a lower layer, an intermediate layer, and an upper layer, in sequence from the tool substrate toward the surface of the tool. The lower layer comprises an A layer having an average composition represented by formula: (Al.sub.1-xCr.sub.x)N, where x is 0.20 to 0.60; the intermediate layer comprises a B layer having an average composition represented by formula: (Al.sub.1-a-bCr.sub.aSi.sub.b)N, where a is 0.20 to 0.60 and b is 0.01 to 0.20; and the upper layer comprises a C layer having an average composition represented by formula: (Ti.sub.1-α-βSi.sub.αW.sub.β)N where α is 0.01 to 0.20 and β is 0.01 to 0.10; and the upper layer has a repeated variation in W level with an average interval of 1 nm to 100 nm between adjacent local maxima and minima.

Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.