Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

A tribological system, comprising a main body and a sandwich lubrication, in which the sandwich lubrication includes a binder-free solid lubricant layer comprising a solid lubricant, and a lubricant layer comprising a lubricant. The binder-free solid lubricant layer and the lubricant layer are present as separate layers on the main body and wherein the mass ratio of solid lubricant to lubricant is at most 0.05:1

A coated part includes a metallic substrate, a thermal barrier comprising a ceramic material and covering the metallic substrate, wherein the coated part further includes a protective coating covering the thermal barrier, the protective coating including, in a first region, a first MAX phase, denoted PZ2, of formula (Zr.sub.xTi.sub.1-x,).sub.2AlC or a first MAX phase, denoted PC2, of formula (Cr.sub.xTi.sub.1-x,).sub.2AlC with x non-zero and less than or equal to 1 in the MAX phases PZ2 and PC2, and the protective coating includes, in a second region covering the first region, a second MAX phase of formula Ti.sub.2AlC.

An antimicrobial and adhesion-proof titanium tableware and a manufacturing method of the same are provided. The antimicrobial and adhesion-proof titanium tableware is made of a titanium substrate, and includes a contact portion and an oxidation layer structure. The contact portion is used for contacting foods, food ingredients, drinking water, beverages, or body parts of a user. The oxidation layer structure is formed on one part of a surface of the titanium substrate corresponding to the contact portion. The titanium substrate is made of titanium in α phase, and the oxidation layer structure is a titanium dioxide film in a rutile crystalline form. The oxidation layer structure has a roughened surface and an oxygen diffusion layer formed at an interface of the oxidation layer structure and the titanium substrate.

Provided is a cutting tool comprising a base body and a hard carbon film arranged on the base body, in which the hard carbon film includes an amorphous phase and a graphite phase, the degree of crystallinity of the hard carbon film is no more than 6.5%, and the degree of orientation of the graphite phase is no more than 6.

A multilayer protective coating system includes a turbine engine component substrate formed of a ceramic matrix composite material, an environmental barrier coating layer including a rare earth disilicate material deposited directly on the substrate, and a plurality of pairs of alternating layers of the rare earth disilicate material and a rare earth monosilicate material deposited and sintered directly on the environmental barrier coating layer. Each layer of the plurality of pairs of alternating layers is relative less thick as compared with the environmental barrier coating layer.

A multilayer protective coating system includes a turbine engine component substrate formed of a ceramic matrix composite material, an environmental barrier coating layer including a rare earth disilicate material deposited directly on the substrate, and a plurality of pairs of alternating layers of the rare earth disilicate material and a rare earth monosilicate material deposited and sintered directly on the environmental barrier coating layer. Each layer of the plurality of pairs of alternating layers is relative less thick as compared with the environmental barrier coating layer.

A coated cutting tool having a substrate and a coating is provided. The coating includes an inner α-Al.sub.2O.sub.3-multilayer and an outer α-Al.sub.2O.sub.3-single-layer. The thickness of the inner α-Al.sub.2O.sub.3-multilayer is less than or equal to 35% of the sum of the thickness of the inner α-Al.sub.2O.sub.3-multilayer and the thickness of the outer α-Al.sub.2O.sub.3-single-layer. The sum of the thickness of the inner α-Al.sub.2O.sub.3-multilayer and the outer α-Al.sub.2O.sub.3-single-layer is 2-15 μm. The inner α-Al.sub.2O.sub.3-multilayer consists of alternating sublayers of α-Al.sub.2O.sub.3 and sublayers of TiCO, TiCNO, AlTiCO or AlTiCNO. The inner α-Al.sub.2O.sub.3-multilayer can include at least 5 sublayers of α-Al.sub.2O.sub.3.

A three-dimensional (3D) memory device includes a substrate, an alternating conductive/dielectric stack disposed on the substrate, an epitaxial layer disposed on the substrate, a blocking layer disposed on the epitaxial layer and surrounded by the alternating conductive/dielectric stack, a trapping layer disposed on and surrounded by the blocking layer, a tunneling layer disposed on and surrounded by the trapping layer, and a semiconductor layer disposed on and in contact with the epitaxial layer and partially disposed on and surrounded by the tunneling layer.

A three-dimensional (3D) memory device includes a substrate, an alternating conductive/dielectric stack disposed on the substrate, an epitaxial layer disposed on the substrate, a blocking layer disposed on the epitaxial layer and surrounded by the alternating conductive/dielectric stack, a trapping layer disposed on and surrounded by the blocking layer, a tunneling layer disposed on and surrounded by the trapping layer, and a semiconductor layer disposed on and in contact with the epitaxial layer and partially disposed on and surrounded by the tunneling layer.