Hexavalent chromium-free slurry formulations which are suitable in the production of ceramic overlay coating systems are described. The formulations provide superior hot corrosion and heat oxidation protection for superalloy substrates. A basecoat slurry and topcoat slurry are provided. The basecoat slurry includes an aluminum phosphate based aqueous solution having a molar ratio of Al:PO.sub.4 higher than about 1:3 with the incorporation of metal oxide particles. The topcoat slurry includes an aluminum phosphate based aqueous solution having a molar ratio of Al:PO.sub.4 higher than about 1:3. Both of the basecoat slurry and the topcoat slurry are hexavalent chromium-free.

A coated tool of the present disclosure is provided with a base member and a coating layer located on a surface of the base member. The coating layer includes a TiCNO layer and an Al.sub.2O.sub.3 layer. The Al.sub.2O.sub.3 layer is located in contact with the TiCNO layer at a position farther from the base member than the TiCNO layer is. The TiCNO layer includes a first composite protrusion including a first protrusion that projects toward the Al.sub.2O.sub.3 layer and a second protrusion that projects from the first protrusion in a direction intersecting a direction in which the first protrusion projects. A cutting tool of the present disclosure is provided with: a holder extending from a first end toward a second end and including a pocket on a side of the first end; and the above-described coated tool located in the pocket.

A method for producing a nitride semiconductor photoelectrode includes: a first step of forming an n-type gallium nitride layer on an electrically insulative or conductive substrate; a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer; a third step of forming a p-type nickel oxide layer on the indium gallium nitride layer; and a fourth step of subjecting a nitride semiconductor in which the p-type nickel oxide layer has been formed to heat treatment.

A method for producing a nitride semiconductor photoelectrode includes: a first step of forming an n-type gallium nitride layer on an electrically insulative or conductive substrate; a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer; a third step of forming a p-type nickel oxide layer on the indium gallium nitride layer; and a fourth step of subjecting a nitride semiconductor in which the p-type nickel oxide layer has been formed to heat treatment.

The coated cutting tool comprises a substrate and a coating layer formed on a surface of the substrate, the coating layer comprises an alternating laminate structure in which two or more first layers and two or more second layers are alternately laminated, the first layer is a compound layer containing Ti(C.sub.aN.sub.1-a), the second layer is a compound layer containing (Ti.sub.xAl.sub.1-x)(C.sub.yN.sub.1-y), an average thickness per layer of each of the first layers and the second layers in the alternating laminate structure is 3 nm or more and 300 nm or less, and an average thickness of the alternating laminate structure is 1.0 μm or more and 8.0 μm or less.

The present invention provides: a lightweight optical member which can be produced at relatively low cost and which provides low reflectance, stability upon exposure to light, and abrasion resistance; and an efficient method for producing such an optical member. An optical member according to the present invention is characterized by comprising: a metallic base material; a low-reflective treatment layer formed on the surface of the metallic base material; and a silica layer formed on the surface of the low-reflective treatment layer. It is preferable for the silica layer to have a layer thickness of 0.1-10 μM.

A cutting tool includes a substrate and a coated film arranged on the substrate. The coated film includes a first layer. The first layer includes a plurality of crystal grains. The crystal grains are composed of Al.sub.xTi.sub.1−xC.sub.yN.sub.1−y, wherein x is more than 0.65 and less than 0.95, and y is not less than 0 and less than 0.1. In a first region, the crystal grains have an average aspect ratio of not more than 3.0. In a second region, the crystal grains have an average aspect ratio of more than 3.0 and not more than 10.0. The crystal grains include crystal grains having a cubic crystal structure. The first layer has a ratio of an area occupied by the crystal grains having a cubic crystal structure of not less than 90%. The first layer has a thickness of not less than 2 m and not more than 20 m.

The present invention for coating a valve head (6) of an inlet and/or outlet valve (4) comprises a preparation of a surface, which is to be coated, of the valve (4) for a coating, and a coating of the prepared surface with a ceramic high-temperature coating (22).

An object of the present invention is to provide an aluminum foil and an aluminum member for electrodes having good adhesiveness to an electrode material and high conductivity with the electrode material. Provided is an aluminum foil having through holes including an aluminum oxide film having a thickness of 25 nm or less on a surface of the aluminum foil, and further a hydrophilic layer on a part of a surface of the aluminum oxide film.

A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.