A system and a method for a nanostructured film including a first layer for reflecting at least a portion of an electromagnetic radiation and a second layer for receiving the remainder of the electromagnetic radiation through the first layer and subsequently reflecting at least a portion of the received electromagnetic radiation through the first layer, wherein two electromagnetic radiations with the same wavelength reflected by the first and second layers respectively are combined to form a strengthened electromagnetic radiation, the wavelength of the strengthened electromagnetic radiation being variable based on the physical property of the first layer.

Provided are a low-price fuel cell separator with high corrosion resistance and a method for manufacturing the separator. The present disclosure relates to a fuel cell separator including a metal substrate and a titanium layer containing titanium formed on the metal substrate, and a method for manufacturing the separator. A ratio of a (100) plane to a sum of values obtained by dividing peak intensities of the (100) plane, a (002) plane, and a (101) plane derived from titanium in an X-ray diffraction analysis of a separator surface by respective relative intensities is a constant value or more.

A substrate for flexible device, including a stainless steel sheet, an oxide layer formed on a surface of the stainless steel sheet, and a glass layer of electrically-insulating bismuth-based glass formed in a form of layer on the surface of the oxide layer. Also disclosed is a sheet for flexible device, including a stainless steel sheet, and an oxide layer on a surface of the stainless steel sheet, the oxide layer having a thickness of not less than 30 nm.

A sheet for heat bonding, having a pre-sintering layer that becomes a sintered layer by being heated, and an adhesion layer.

The present disclosure provides a radio wave transmissive metallic member having an excellent metallic luster. The present disclosure relates to a metallic member and a method for manufacturing the same. The metallic member comprises a substrate body, an ion-exchange resin layer formed on the substrate body, and a metal particle layer formed on the ion-exchange resin layer, wherein metal particles having a high aspect ratio are longitudinally oriented with respect to the ion-exchange resin layer and the substrate body.

An oxide superconducting wire includes a superconductor laminate including an oxide superconducting layer on at least one surface of a base material, and a plating layer which is included in a stabilizing layer of the superconductor laminate and formed by plating. A surface roughness Ra of the plating layer is 1.0 μm or more and 2.0 μm or less. An entire average crystal grain size of the plating layer is 0.86 μm or more and 3.05 μm or less.

According to one aspect of the present invention, a non-metal member having a colored surface is provided. The non-metal member having a colored surface includes a non-metal substrate; a metal coating layer disposed on the non-metal substrate; a light-transmissive dielectric layer disposed on the metal coating layer; and a color pattern structure disposed on the light-transmissive dielectric layer.

A layered stack that can be used as an oxidation and chemical barrier with superalloy substrates, including Ni, Ni—Co, Co, and Ni-aluminide based substrates, and methods of preparing the layered stack. The layer system can be applied to a substrate in a single physical vapor deposition process with no interruption of vacuum conditions.

A method for manufacturing a semiconductor substrate by forming an insulator film and a semiconductor single crystal layer on a surface of a silicon single crystal substrate to manufacture a semiconductor substrate having the semiconductor single crystal layer on the insulator film, the method including at least the steps of: forming a silicon nitride film having an epitaxial relationship with the silicon single crystal substrate on the surface of the silicon single crystal substrate as the insulator film by subjecting the silicon single crystal substrate to a heat treatment under a nitrogen gas-containing atmosphere; and forming the semiconductor single crystal layer on the silicon nitride film by epitaxial growth. This makes it possible to obtain a semiconductor substrate by simple method with high productivity at low cost even when the insulator film provided between the silicon single crystal substrate and the semiconductor single crystal layer is a silicon nitride film.

A calcium-magnesium-alumino-silicate (CMAS)-reactive thermal barrier coating includes a ceramic coating and a CMAS-reactive overlay coating, wherein the CMAS-reactive overlay coating conforms to a surface of the ceramic coating and comprises a compound that forms a stable high melting point crystalline precipitate when reacted with molten CMAS at a rate that is competitive with CMAS infiltration kinetics into the thermal barrier coating. The ceramic coating phase is stable with the CMAS-reactive overlay coating.