C23C28/30

Antireflection hard coating film and preparation method thereof

Provided is a hard coating film in which a hard coating layer having a water contact angle of 90° or less, a conductive layer, and a low refractive index layer are laminated on a substrate, the film having excellent hardness, anti-curling property, antireflection performance, antifouling performance, and antistatic performance.

Hot stamped body

A hot stamped body comprising a steel base material and an Al—Zn—Mg-based plating layer formed on a surface of the steel base material, wherein the plating layer has a predetermined chemical composition, the plating layer comprises an interfacial layer positioned at an interface with the steel base material and containing Fe and Al and a main layer positioned on the interfacial layer, the main layer comprises, by area ratio, 10.0 to 85.0% of an Mg—Zn containing phase and 15.0 to 90.0% of an Fe—Al containing phase, the Mg—Zn containing phase comprises at least one selected from the group consisting of an MgZn phase, Mg.sub.2 Zn.sub.3 phase, and MgZn.sub.2 phase, and the Fe—Al containing phase comprises at least one of an FeAl phase and Fe—Al—Zn phase and an area ratio of the Fe—Al—Zn phase in the main layer is 10.0% or less.

SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND METHOD FOR PRODUCING NANOWIRE OR NANOSHEET TRANSISTOR

The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.

COATED METAL ALLOY SUBSTRATE AND PROCESS FOR PRODUCTION THEREOF
20220403528 · 2022-12-22 ·

A coated metal alloy substrate for an electronic device, a process for producing a coated metal alloy substrate for an electronic device and a housing for an electronic device, comprising a coated metal alloy substrate wherein the coated metal alloy CA substrate comprises at least one chamfered edge (1) and comprises: a passivation layer (2) deposited on the at least one chamfered edge (1); an electrophoretic deposition layer (3) deposited on the passivation layer (2); and a hydrophobic layer (4) deposited on the electrophoretic deposition layer (3).

Additive manufacturing for segmented electric machines

A method of making a component of an electrical machine is provided. An additive manufacturing process is used to manufacture a part, including applying beams of energy to a successive plurality of ferromagnetic material particles and fusing them together to form a ring or segment of a ring with an axis, a solid portion, and laminas that extend from the solid portion in a radial or axial direction.

Sn-BASED PLATED STEEL SHEET
20220389590 · 2022-12-08 · ·

To provide a Sn-based plated steel sheet excellent in yellowing resistance, coating film adhesiveness, and sulfurization blackening resistance without performing the conventional chromate treatment.

A Sn-based plated steel sheet of the present invention includes: a steel sheet; a Sn-based plating layer located on at least one surface of the steel sheet; and a coating layer located on the Sn-based plating layer, wherein: the Sn-based plating layer contains 0.10 to 15.00 g/m.sup.2 of Sn per side in terms of metal Sn; the coating layer contains a Zr oxide and a Mn oxide; a content of the Zr oxide is 0.20 to 50.00 mg/m.sup.2 per side in terms of metal Zr; a content of the Mn oxide in terms of metal Mn is 0.01 to 0.50 times on a mass basis relative to the content of the Zr oxide in terms of metal Zr; and a depth position A where an element concentration of Mn is maximum is located on a side closer to a surface of the coating layer than a depth position B where an element concentration of Zr is maximum, and a distance in a depth direction between the depth position A and the depth position B is 2 nm or more in an element analysis in the depth direction by XPS.

METAL OXIDE RESIST PATTERNING WITH ELECTRICAL FIELD GUIDED POST-EXPOSURE BAKE

A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.

Anodic oxide film structure

Proposed is an anodic oxide film structure that includes an anodic oxide film sheet and has high strength, chemical resistance and corrosion resistance.

Press hardening method

A press hardening method including the following steps: A. the provision of a steel sheet for heat treatment being optionally coated with a zinc- or aluminum-based pre-coating, B. the flexible rolling of the steel sheet in the rolling direction so as to obtain a steel sheet having a variable thickness, C. the cutting of the rolled steel sheet to obtain a tailored rolled blank, D. the deposition of a hydrogen barrier pre-coating over a thickness from 10 to 550 nm, E. the heat treatment of the tailored rolled blank to obtain a fully austenitic microstructure in the steel, F. the transfer of the tailored rolled blank into a press tool, G. the hot-forming of the tailored rolled blank to obtain a part having a variable thickness,H. the cooling of the part having a variable thickness obtained at step G).

Method for doping using electric field

A doping method using an electric field includes stacking a sacrificial layer on a doped layer, disposing a doping material on the sacrificial layer, disposing electrodes on the doping material and the doped layer, respectively, and doping the doping material into the doped layer through oxidation, diffusion, and reduction of the doping material by the electric field.