Methods for forming high temperature coating systems are provided. In embodiments, the coating formation method includes forming a fracture-resistant Thermal Barrier Coating (TBC) layer over a workpiece surface. The fracture-resistant TBC layer is produced from a first coating precursor material containing an amount of zirconia in mole percent (ZrO.sub.mol%1) and an amount of tantala in mole percent (TaO.sub.mol%1). A Calcium-Magnesium Aluminosilicate (CMAS) resistant TBC layer is formed over the fracture-resistant TBC layer from a second coating precursor material, which contains an amount of zirconia in mole percent (ZrO.sub.mol%2), an amount of tantala in mole percent (TaO.sub.mol%2), and an amount of one or more rare earth oxides in mole percent (REO.sub.mol%2). The first and second coating precursor materials are formulated such that ZrO.sub.mol%1 is greater than ZrO.sub.mol%2, TaO.sub.mol%1 is less than TaO.sub.mol%2, and TaO.sub.mol%2 is substantially equivalent to REO.sub.mol%2.

A cutting tool is a cutting tool comprising a substrate and a coating film disposed on the substrate, in which the coating film includes a first layer, the first layer is composed of an alternate layer where a first unit layer and a second unit layer are alternately stacked, the first unit layer is composed of Al.sub.aCr.sub.1-a-bCe.sub.bN, a is more than 0.500 and 0.800 or less, b is 0.001 or more and 0.100 or less, the second unit layer is composed of Al.sub.cV.sub.1-cN, c is 0.30 or more and 0.75 or less, and a and c satisfy a relationship of a>c.

Methods for forming a laminate film on substrate by a plasma-enhanced cyclical deposition process are provided. The methods may include: providing a substrate into a reaction chamber, and depositing on substrate a metal oxide laminate film by alternatingly depositing a first metal oxide film and a second metal oxide film different from the first metal oxide film, wherein depositing the first metal oxide film and the second metal oxide film comprises, contacting the substrate with sequential and alternating pulses of a metal precursor and an oxygen reactive species generated by applying RF power to a reactant gas comprising at least nitrous oxide (N.sub.2O).

A method for depositing carbon on a substrate in a processing chamber includes arranging the substrate on a substrate support in the processing chamber. The substrate includes a carbon film having a first thickness formed on at least one underlying layer of the substrate. The method further includes performing a first etching step to etch the substrate to form features on the substrate, remove portions of the carbon film, and decrease the first thickness of the carbon film, selectively depositing carbon onto remaining portions of the carbon film, and performing at least one second etching step to etch the substrate to complete the forming of the features on the substrate.

A protective coating layer, an electronic device including such a protective coating layer, and the methods of making the same are provided. The electronic device includes a substrate, a thin film circuit layer disposed over the substrate, and a protective coating layer disposed over the thin film circuit layer. The protective coating layer includes a first coating and a second coating disposed over the first coating. Each coating has a cross-plane thermal conductivity in a direction normal to a respective coating surface equal to or higher than 0.5 W/(m*K). The first coating and the second coating have different crystal or amorphous structures, different crystalline orientations, different compositions, or a combination thereof to provide different nanoindentation hardness. The first coating has a hardness lower than that of the second coating.

Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.

A process for producing a hard material layer on a substrate. A multilayer coating system is applied to the substrate by alternate deposition of CrTaN and AlTiN by way of physical vapor deposition (PVD). The CrTaN and/or the AlTiN are preferably deposited from a composite target.

Methods for forming high temperature coating systems are provided, as are gas turbine engine components including high temperature coating systems. In embodiments, the coating formation method includes forming a fracture-resistant Thermal Barrier Coating (TBC) layer over a workpiece surface. The fracture-resistant TBC layer is produced from a first coating precursor material containing an amount of zirconia in mole percent (ZrO.sub.mol %1) and an amount of tantala in mole percent (TaO.sub.mol %1). A Calcium-Magnesium Aluminosilicate (CMAS) resistant TBC layer is formed over the fracture-resistant TBC layer from a second coating precursor material, which contains an amount of zirconia in mole percent (ZrO.sub.mol %2), an amount of tantala in mole percent (TaO.sub.mol %2), and an amount of one or more rare earth oxides in mole percent (REO.sub.mol %2). The first and second coating precursor materials are formulated such that ZrO.sub.mol %1 is greater than ZrO.sub.mol %2, TaO.sub.mol %1 is less than TaO.sub.mol %2, and TaO.sub.mol %2 is substantially equivalent to REO.sub.mol %2.

A conductive substrate includes a transparent base material; a metal layer formed on at least one of surfaces of the transparent base material; and a blackened layer formed on the metal layer by a wet method.

In a hard mask formed on a target film formed on a substrate, a first film having a stress in a first direction and a second film having a stress in a second direction opposite to the first direction are alternately stacked one or more times.