A method for making a conductive film includes the steps of: depositing a conductive metal film on a substrate to form a metal-coated substrate; depositing a fiber pattern on the conductive metal film of the metal-coated substrate to form a masked substrate, the fiber pattern defining protected metal and exposed metal of the conductive metal film; removing the exposed metal from the conductive metal film of the masked substrate to form a protected conductive film; and removing the fiber pattern from the protected conductive film to expose the protected metal and provide a metal pattern on the substrate. An annealing step con be employed after depositing the fiber pattern to increase the surface area of contact between the fiber pattern and the conductive metal film.

A touch screen panel includes a substrate and a transparent electrode. The transparent electrode is disposed on a display area of the substrate and includes an adhesion layer, a metal layer disposed on the adhesion layer and a protecting layer disposed on the metal layer. A thickness of the metal layer is about 150 Å to about 250 Å. A thickness of the adhesion layer or a thickness of the protecting layer is about 50 Å to about 140 Å.

A touch screen panel includes a substrate and a transparent electrode. The transparent electrode is disposed on a display area of the substrate and includes an adhesion layer, a metal layer disposed on the adhesion layer and a protecting layer disposed on the metal layer. A thickness of the metal layer is about 150 Å to about 250 Å. A thickness of the adhesion layer or a thickness of the protecting layer is about 50 Å to about 140 Å.

A method for manufacturing structured press elements comprises at least the following steps: the step of providing an element of metal; the step of providing a mask on a surface of the element for shielding portions of the surface; the step of treating non-shielded portions of the surface of the element; the step of removing the mask; wherein the method comprises at least a step in which the surface of the element is subjected to an ultrasonic treatment and/or that the step of providing the mask comprises at least a treatment with infrared radiation and/or that the step of chemically treating is performed with the surface directed downward.

A method for manufacturing structured press elements comprises at least the following steps: the step of providing an element of metal; the step of providing a mask on a surface of the element for shielding portions of the surface; the step of treating non-shielded portions of the surface of the element; the step of removing the mask; wherein the method comprises at least a step in which the surface of the element is subjected to an ultrasonic treatment and/or that the step of providing the mask comprises at least a treatment with infrared radiation and/or that the step of chemically treating is performed with the surface directed downward.

Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.

Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.

An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern.

An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern.

An etchant composition includes an inorganic acid compound of about 8 wt % to about 15 wt %, a sulfonic acid compound of about 2.5 wt % to about 8 wt %, a sulfate compound of about 6 wt % to about 14 wt %, an organic acid compound of about 40 wt % to about 55 wt %, a metal or metal salt of about 0.01 wt % to about 0.06 wt %, and water.