A metal mask substrate includes a metal obverse surface configured such that a resist is placed on the obverse surface. The obverse surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm. The obverse surface also has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm.

A metal mask substrate includes a metal obverse surface configured such that a resist is placed on the obverse surface. The obverse surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm. The obverse surface also has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm.

An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.

Embodiments of the invention relate generally to overmolded protective leaching masks, and methods of manufacturing and using the same for leaching superabrasive elements such as polycrystalline diamond elements. In an embodiment, a protective leaching mask assembly includes a superabrasive element including a central axis and a superabrasive table, and a protective mask overmolded onto at least a portion of the superabrasive element. The protective mask includes a base portion and at least one sidewall extending from the base portion and defining an opening generally opposite the base portion. The at least one sidewall includes an inner surface configured to abut with a selected portion of the superabrasive element being chemically resistant to a leaching agent and an outer surface sloping at an oblique angle relative to the central axis.

Embodiments of the invention relate generally to overmolded protective leaching masks, and methods of manufacturing and using the same for leaching superabrasive elements such as polycrystalline diamond elements. In an embodiment, a protective leaching mask assembly includes a superabrasive element including a central axis and a superabrasive table, and a protective mask overmolded onto at least a portion of the superabrasive element. The protective mask includes a base portion and at least one sidewall extending from the base portion and defining an opening generally opposite the base portion. The at least one sidewall includes an inner surface configured to abut with a selected portion of the superabrasive element being chemically resistant to a leaching agent and an outer surface sloping at an oblique angle relative to the central axis.

This application relates to a multi-piece enclosure for a portable electronic device. The enclosure includes a metal part including a metal substrate and a metal oxide layer overlaying the metal substrate, the metal oxide layer having an external surface that includes openings that lead into undercut regions. The openings are characterized as having a first width, and the undercut regions are characterized as having a second width that is greater than the first width. The enclosure further includes a non-metallic bulk layer including protruding portions that extend into the undercut regions such that the non-metallic bulk layer is interlocked with the metal part.

A method of preparing a metal mask substrate includes providing a metal substrate. Next, a gloss is measured and obtained from the surface of the metal substrate. Next, the gloss is determined whether to be within a predetermined range. When the gloss is determined within the predetermined range, a photolithography process is performed to the metal substrate, where the predetermined range is between 90 GU and 400 GU.

A method of preparing a metal mask substrate includes providing a metal substrate. Next, a gloss is measured and obtained from the surface of the metal substrate. Next, the gloss is determined whether to be within a predetermined range. When the gloss is determined within the predetermined range, a photolithography process is performed to the metal substrate, where the predetermined range is between 90 GU and 400 GU.

A method for in situ protection of a surface (7a) of an aluminum layer (7) of a VUV radiation reflecting coating (6) of an optical element (4), arranged in an interior of an optical arrangement, against the growth of an aluminum oxide layer (8), including carrying out an atomic layer etching process for layer-by-layer removal of the aluminum oxide layer from the surface. The etching process includes a surface modification step and a material detachment step. At least one boron halide is supplied as a surface modifying reactant to the interior in pulsed fashion during the surface modification step. A plasma is generated at a surface (8a) of the aluminum oxide layer, at least during the material detachment step. The atomic layer etching process is performed until the aluminum oxide layer reaches a given thickness (D), or the aluminum oxide layer is kept below that thickness (D) by the process.

A method for in situ protection of a surface (7a) of an aluminum layer (7) of a VUV radiation reflecting coating (6) of an optical element (4), arranged in an interior of an optical arrangement, against the growth of an aluminum oxide layer (8), including carrying out an atomic layer etching process for layer-by-layer removal of the aluminum oxide layer from the surface. The etching process includes a surface modification step and a material detachment step. At least one boron halide is supplied as a surface modifying reactant to the interior in pulsed fashion during the surface modification step. A plasma is generated at a surface (8a) of the aluminum oxide layer, at least during the material detachment step. The atomic layer etching process is performed until the aluminum oxide layer reaches a given thickness (D), or the aluminum oxide layer is kept below that thickness (D) by the process.