Patent classifications
C23F1/02
Web support, production method therefor, and patterning method
A web support with a high degree of patterning freedom and excellent durability, a production method therefor, and a patterning method. The web support is used when applying a pattern to a nonwoven substance by jetting a high-pressure water stream on a web. The web support production method comprises: a step of preparing a flat metal base material; a step for forming, by etching, a first water conduction hole and second water conduction hole that pass through the front surface of the base material to the back surface, and a recess on the front surface of the base material that includes the first water conduction hole and that corresponds to the pattern; and a step for forming the base material into a cylindrical main body section by welding the edges of the base material to each other.
MULTI-PURPOSE ACID-ETCHED METALLIC STAMPS AND DIES
A metallic stamp and die for the craft industry comprises a predetermined acid-etched design on a surface of a metallic plate. A first layer of a metallic paint is applied over the front and back surfaces of the metallic stamp and die. A second layer of a rubber paint is applied over the metallic paint. The metallic paint facilitates bonding of the rubber paint to the metallic plate and increases the life of the coating of the rubber paint. The rubber paint is configured to absorb and store an ink and facilitate transfer of the ink to one or more substrates, thus enabling stamping of the design on the substrate. The metallic die can be configured for a plurality of uses, such as embossing, cutting, heat-foiling, stamping, scoring, and inserting patterns or designs in a plurality of substrates.
MULTI-PURPOSE ACID-ETCHED METALLIC STAMPS AND DIES
A metallic stamp and die for the craft industry comprises a predetermined acid-etched design on a surface of a metallic plate. A first layer of a metallic paint is applied over the front and back surfaces of the metallic stamp and die. A second layer of a rubber paint is applied over the metallic paint. The metallic paint facilitates bonding of the rubber paint to the metallic plate and increases the life of the coating of the rubber paint. The rubber paint is configured to absorb and store an ink and facilitate transfer of the ink to one or more substrates, thus enabling stamping of the design on the substrate. The metallic die can be configured for a plurality of uses, such as embossing, cutting, heat-foiling, stamping, scoring, and inserting patterns or designs in a plurality of substrates.
METAL REMOVAL METHOD, DRY ETCHING METHOD, AND PRODUCTION METHOD FOR SEMICONDUCTOR ELEMENT
A metal removal method which includes: a reaction step of bringing a treatment gas containing a fluorine-containing interhalogen compound and a metal-containing material containing a metal element into contact with each other to generate metal fluoride which is a reaction product of the fluorine-containing interhalogen compound and the metal element; and a volatilization step of heating the metal fluoride under an inert gas atmosphere or in a vacuum environment for volatilization. The metal element is at least one kind selected from iron, cobalt, nickel, selenium, molybdenum, rhodium, palladium, tungsten, rhenium, iridium, and platinum. Also disclosed is a dry etching method using the metal removal method and a production method for a semiconductor element using the dry etching method.
METAL REMOVAL METHOD, DRY ETCHING METHOD, AND PRODUCTION METHOD FOR SEMICONDUCTOR ELEMENT
A metal removal method which includes: a reaction step of bringing a treatment gas containing a fluorine-containing interhalogen compound and a metal-containing material containing a metal element into contact with each other to generate metal fluoride which is a reaction product of the fluorine-containing interhalogen compound and the metal element; and a volatilization step of heating the metal fluoride under an inert gas atmosphere or in a vacuum environment for volatilization. The metal element is at least one kind selected from iron, cobalt, nickel, selenium, molybdenum, rhodium, palladium, tungsten, rhenium, iridium, and platinum. Also disclosed is a dry etching method using the metal removal method and a production method for a semiconductor element using the dry etching method.
Amorphous metal strip and method for producing an amorphous metal strip
A method for the production of a metal strip is provided. The method includes providing an amorphous metal strip having a first main surface and a second, opposing main surface. The first and/or the second main surface are treated with a wet-chemical etching process and/or a photochemical etching process.
Amorphous metal strip and method for producing an amorphous metal strip
A method for the production of a metal strip is provided. The method includes providing an amorphous metal strip having a first main surface and a second, opposing main surface. The first and/or the second main surface are treated with a wet-chemical etching process and/or a photochemical etching process.
Method for Improving Pit Defect Formed After Copper Electroplating Process
The present application provides a method for improving a pit defect formed after a copper electroplating process, comprising: forming a dielectric layer on a wafer; etching the dielectric layer to form a trench; forming a seed barrier layer on the surface of the trench; pre-cleaning the wafer to increase the wetness of the trench on the wafer; filling the trench with copper by means of electroplating; polishing the upper surface of the trench to planarize the upper surface of the trench. The wetness of the wafer surface can be increased by pre-cleaning a via. An excessively dry wafer surface leads to a poor wetness effect when the wafer enters water, a bubble is difficult to be discharged, a void is easy to be generated in electroplating. By the pre-cleaning step, the problem of a poor wetness effect occurring when the wafer enters water can be effectively improved.
Method for Improving Pit Defect Formed After Copper Electroplating Process
The present application provides a method for improving a pit defect formed after a copper electroplating process, comprising: forming a dielectric layer on a wafer; etching the dielectric layer to form a trench; forming a seed barrier layer on the surface of the trench; pre-cleaning the wafer to increase the wetness of the trench on the wafer; filling the trench with copper by means of electroplating; polishing the upper surface of the trench to planarize the upper surface of the trench. The wetness of the wafer surface can be increased by pre-cleaning a via. An excessively dry wafer surface leads to a poor wetness effect when the wafer enters water, a bubble is difficult to be discharged, a void is easy to be generated in electroplating. By the pre-cleaning step, the problem of a poor wetness effect occurring when the wafer enters water can be effectively improved.
METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE
A method of manufacturing a semiconductor package, the method including providing a first seed layer on an insulation layer such that the first seed layer includes a first metal material; providing a second seed layer on the first seed layer such that the second seed layer includes a second metal material different from the first metal material; forming photoresist patterns on the second seed layer; forming conductive patterns between the photoresist patterns, including the second metal material, and having line shapes that extend in a first direction; removing the photoresist patterns; etching the second seed layer to form second seed patterns having line shapes extending in the first direction; and etching the first seed layer to form first seed patterns having line shapes extending in the first direction, wherein an etchant includes deionized water, a fluorine compound, a competing compound, and a corrosion inhibitor.