Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

A method for additively manufacturing an object is provided. The method includes forming the object on a sacrificial layer of a substrate such that the object is secured to a base layer of the substrate via the sacrificial layer. The method further includes removing at least some of the sacrificial layer from the substrate so that the object is no longer secured to the base layer.

A method for additively manufacturing an object is provided. The method includes forming the object on a sacrificial layer of a substrate such that the object is secured to a base layer of the substrate via the sacrificial layer. The method further includes removing at least some of the sacrificial layer from the substrate so that the object is no longer secured to the base layer.

A method of micro-texturing a surface is disclosed. The method includes printing an etchant onto a substrate surface and forming a micro-texture on the substrate surface by removing material from the substrate surface.

A method of micro-texturing a surface is disclosed. The method includes printing an etchant onto a substrate surface and forming a micro-texture on the substrate surface by removing material from the substrate surface.

A method of micro-texturing a substrate surface is disclosed, including printing a maskant on the substrate surface to define exposed surface zones on the substrate surface. The method further includes forming a micro-texture on the substrate surface by removing material from the exposed surface zones, and removing the maskant from the substrate surface.

A method of micro-texturing a substrate surface is disclosed, including printing a maskant on the substrate surface to define exposed surface zones on the substrate surface. The method further includes forming a micro-texture on the substrate surface by removing material from the exposed surface zones, and removing the maskant from the substrate surface.

Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

A method for transferring graphene according to an exemplary embodiment of the present invention includes a process of transferring graphene of a metal sheet onto a thermal release film in each vacuum chamber and a process of transferring the graphene of the thermal release film onto a base material substrate. According to the method for transferring graphene, adhesion is increased by removing bubbles or foreign substances at the time of transferring the graphene to prevent separation of the graphene at the time of etching a metal substrate and enhance an adhesive quality state of the graphene on a target substrate.

A method for transferring graphene according to an exemplary embodiment of the present invention includes a process of transferring graphene of a metal sheet onto a thermal release film in each vacuum chamber and a process of transferring the graphene of the thermal release film onto a base material substrate. According to the method for transferring graphene, adhesion is increased by removing bubbles or foreign substances at the time of transferring the graphene to prevent separation of the graphene at the time of etching a metal substrate and enhance an adhesive quality state of the graphene on a target substrate.