Methods, apparatuses and systems are disclosed for chemically etching parts by generating an enclosed chemical etching chamber in contact with a part surface and directing a flow of chemical etchant solution in contact with a part region to be etched.

A substrate processing apparatus includes: a processing tank configured to store a processing liquid for processing a substrate; a circulation path through which the processing liquid is taken out from the processing tank and is returned to the processing tank; a substrate holder configured to hold the substrate; a lifter configured to raise and lower the substrate holder between an immersion position inside the processing tank and a standby position above the processing tank; and a controller configured to control the lifter, wherein the processing liquid is a mixed liquid obtained by mixing a first component and a second component and generates a heat of mixing, and the controller is configured to perform a control to immerse the substrate in the mixed liquid before a temperature of the mixed liquid rises due to the heat of mixing and reaches a peak temperature.

A substrate processing apparatus includes: a processing tank configured to store a processing liquid for processing a substrate; a circulation path through which the processing liquid is taken out from the processing tank and is returned to the processing tank; a substrate holder configured to hold the substrate; a lifter configured to raise and lower the substrate holder between an immersion position inside the processing tank and a standby position above the processing tank; and a controller configured to control the lifter, wherein the processing liquid is a mixed liquid obtained by mixing a first component and a second component and generates a heat of mixing, and the controller is configured to perform a control to immerse the substrate in the mixed liquid before a temperature of the mixed liquid rises due to the heat of mixing and reaches a peak temperature.

A device for structuring the surface of a metal pressed sheet or of an endless strip, comprising a support device adapted to support the metal pressed sheet or endless strip during structuring, and a spray head and a slideway adapted to permit movement of the spray head into a desired position within a plane defined by an X and a Y coordinate. The spray head is further adapted to move in a Z direction with reference to a work surface which is spanned by the X and Y direction, and the spray head is guided by means of a digitalized template that is identical to the printed image of an impregnated paper used in a further pressing process. Independent drive elements are connected to a control unit and configured to move the spray head into the desired position.

A device for structuring the surface of a metal pressed sheet or of an endless strip, comprising a support device adapted to support the metal pressed sheet or endless strip during structuring, and a spray head and a slideway adapted to permit movement of the spray head into a desired position within a plane defined by an X and a Y coordinate. The spray head is further adapted to move in a Z direction with reference to a work surface which is spanned by the X and Y direction, and the spray head is guided by means of a digitalized template that is identical to the printed image of an impregnated paper used in a further pressing process. Independent drive elements are connected to a control unit and configured to move the spray head into the desired position.

A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.

A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.

The plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, an upper electrode, a dielectric plate, and a waveguide. The stage is provided in the processing container. The dielectric plate is provided above the stage with a space in the processing container interposed therebetween. The upper electrode is provided above the dielectric plate. The waveguide has an end and guides high frequency waves in a VHF band or a UHF band. The end is arranged to face the space to radiate high frequency waves to the space. The dielectric plate includes a conductive film. The conductive film is provided on an upper surface of the dielectric plate. The upper surface faces the upper electrode. The conductive film is electrically connected to the upper electrode.

A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.

A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.