A plasma reactor for processing a workpiece includes a reactor chamber having a ceiling and a sidewall and a workpiece support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.

A coating liquid containing metal as a metal-containing coating liquid is supplied to a surface to be processed of a substrate by a coating processing unit, whereby a metal-containing coating film is formed on the surface to be processed. The substrate on which the metal-containing coating film has been formed is transported to a metal removal unit by a transport mechanism. A removal liquid for dissolving the metal is supplied to a peripheral portion of the substrate by the metal removal unit such that the metal-containing coating film remains in a region except for the peripheral portion of the surface to be processed of the substrate.

A coating liquid containing metal as a metal-containing coating liquid is supplied to a surface to be processed of a substrate by a coating processing unit, whereby a metal-containing coating film is formed on the surface to be processed. The substrate on which the metal-containing coating film has been formed is transported to a metal removal unit by a transport mechanism. A removal liquid for dissolving the metal is supplied to a peripheral portion of the substrate by the metal removal unit such that the metal-containing coating film remains in a region except for the peripheral portion of the surface to be processed of the substrate.

A method for transferring graphene according to an exemplary embodiment of the present invention includes a process of transferring graphene of a metal sheet onto a thermal release film in each vacuum chamber and a process of transferring the graphene of the thermal release film onto a base material substrate. According to the method for transferring graphene, adhesion is increased by removing bubbles or foreign substances at the time of transferring the graphene to prevent separation of the graphene at the time of etching a metal substrate and enhance an adhesive quality state of the graphene on a target substrate.

A method for transferring graphene according to an exemplary embodiment of the present invention includes a process of transferring graphene of a metal sheet onto a thermal release film in each vacuum chamber and a process of transferring the graphene of the thermal release film onto a base material substrate. According to the method for transferring graphene, adhesion is increased by removing bubbles or foreign substances at the time of transferring the graphene to prevent separation of the graphene at the time of etching a metal substrate and enhance an adhesive quality state of the graphene on a target substrate.

The present invention relates to a method for treating a surface of an object which comprises the steps consisting of bringing the surface to be treated in contact with a diffusion intermediate and then maintaining said surface to be treated in contact with said diffusion intermediate without any movement relatively to each other, said diffusion intermediate being impregnated with a corrosive solution prior to contacting or during said contacting. The present invention also relates to a device implemented during such a method.

The present invention relates to a method for treating a surface of an object which comprises the steps consisting of bringing the surface to be treated in contact with a diffusion intermediate and then maintaining said surface to be treated in contact with said diffusion intermediate without any movement relatively to each other, said diffusion intermediate being impregnated with a corrosive solution prior to contacting or during said contacting. The present invention also relates to a device implemented during such a method.

In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a plurality of protrusions. The method further includes removing the plurality of protrusions by exposing the layer to a fluid that has gas bubbles and a liquid.

In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a plurality of protrusions. The method further includes removing the plurality of protrusions by exposing the layer to a fluid that has gas bubbles and a liquid.

A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.