In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus comprises: a chamber; a substrate support disposed in the chamber; a gas supply disposed in the chamber and connected to a supply source of reaction gas containing HF gas and C.sub.xH.sub.yF.sub.z gas (where x and z are integers equal to or greater than 1 and y is an integer equal to or greater than 0); and a plasma-generator configured to form a plasma from the reaction gas supplied to the chamber from the gas supply, wherein at least a portion of the chamber exposed to the plasma is made of a conductive silicon-containing material.

In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus comprises: a chamber; a substrate support disposed in the chamber; a gas supply disposed in the chamber and connected to a supply source of reaction gas containing HF gas and C.sub.xH.sub.yF.sub.z gas (where x and z are integers equal to or greater than 1 and y is an integer equal to or greater than 0); and a plasma-generator configured to form a plasma from the reaction gas supplied to the chamber from the gas supply, wherein at least a portion of the chamber exposed to the plasma is made of a conductive silicon-containing material.

A method for the production of a metal strip is provided. The method includes providing an amorphous metal strip having a first main surface and a second, opposing main surface. The first and/or the second main surface are treated with a wet-chemical etching process and/or a photochemical etching process.

A process control system according to one embodiment of the present invention comprises: a first system for generating thickness information about an internal defect layer included in a carbon steel product; and a second system which receives the thickness information about the internal defect layer from the first system through a network, and which controls an etching process for removing at least a part of the internal defect layer from the carbon steel product by using the thickness information about the internal defect layer, wherein the first system provides the second system with a calculation module necessary for the second system to control the etching process, and the second system provides the first system with the information necessary for the first system to update the calculation module.

A process control system according to one embodiment of the present invention comprises: a first system for generating thickness information about an internal defect layer included in a carbon steel product; and a second system which receives the thickness information about the internal defect layer from the first system through a network, and which controls an etching process for removing at least a part of the internal defect layer from the carbon steel product by using the thickness information about the internal defect layer, wherein the first system provides the second system with a calculation module necessary for the second system to control the etching process, and the second system provides the first system with the information necessary for the first system to update the calculation module.

In an etch process chamber, oscillators are positioned a predetermined distance away from an outer wall and coupled to a microwave generator. An inner wall of the process chamber on which particulates such as polymers adhere from the etch process is vibrated via operations of the oscillators. A gas flows into the cavity defined by the inner wall to collect the displaced particulates, which is then pumped out of the cavity to clean the process chamber. A controller identifies the polymer recipe used during the etch process and selects an oscillation program from memory. A microwave generator, controlled by the controller, is directed to generate microwaves at preselected frequencies determined from the program. The microwave frequencies are communicated to the oscillators, which then vibrate the inner wall at such received frequencies.

In an etch process chamber, oscillators are positioned a predetermined distance away from an outer wall and coupled to a microwave generator. An inner wall of the process chamber on which particulates such as polymers adhere from the etch process is vibrated via operations of the oscillators. A gas flows into the cavity defined by the inner wall to collect the displaced particulates, which is then pumped out of the cavity to clean the process chamber. A controller identifies the polymer recipe used during the etch process and selects an oscillation program from memory. A microwave generator, controlled by the controller, is directed to generate microwaves at preselected frequencies determined from the program. The microwave frequencies are communicated to the oscillators, which then vibrate the inner wall at such received frequencies.

Disclosed is an apparatus and method for forming lubricant recesses having minute configurations by applying a photolithograph method in a curved inner surface, such as a cylinder bore surface of a cylinder block, the inside of a cylinder liner, the inside of a compressor cylinder, a big end of a connecting rod, a big end bearing, a shaft insertion hole of a rocker arm, or the like in an internal combustion engine.

Disclosed is an apparatus and method for forming lubricant recesses having minute configurations by applying a photolithograph method in a curved inner surface, such as a cylinder bore surface of a cylinder block, the inside of a cylinder liner, the inside of a compressor cylinder, a big end of a connecting rod, a big end bearing, a shaft insertion hole of a rocker arm, or the like in an internal combustion engine.

Disclosed is a method for treating a substrate, on which a plurality of reference marks and a pattern are formed. The method includes a process preparing operation, a location information acquiring operation of acquiring information on an actual location of the pattern, and a process executing operation of supplying a treatment liquid to the substrate, and heating the substrate by irradiating laser light to the pattern on the substrate, to which the treatment liquid is applied, the location information acquiring operation includes acquiring information on actual locations of, among the plurality of reference marks, at least three reference marks, and acquiring information of the actual location of the pattern through the information of the actual locations of the reference marks.