A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workpiece support. A grid may be included for masking spatial effects of the struts from the processing region.

Disclosed herein are an etching apparatus and method that are capable of performing an etching process in the state where a flexible film is wound around a drum-type jig, and a flexible film etched by the etching method. The etching apparatus includes a process tank containing an etchant therein, a drum-type jig rotatably provided in the process tank to be immersed into the etchant in a state where a flexible film on which a thin film is formed is wound around the drum-type jig, and a drum-type jig driver configured to rotate the drum-type jig. The etching apparatus has a compact structure to efficiently perform the etching process on the large area flexible film on which the thin film is formed.

Disclosed are a sealed cobalt leaching device, a reagent for the cobalt leaching, a method using the device, and use of the method. The sealed cobalt leaching device includes a base, where a top of the base is provided with a first groove; a chemical solution holding tool is provided above the base; a bottom of the chemical solution holding tool is removably connected to the base; a holding through-hole penetrating up and down is formed inside the chemical solution holding tool; and a sealing cover is provided above the chemical solution holding tool. Beneficial effects of the present disclosure: Through the combination of the base, the chemical solution holding tool, and the sealing cover, the holding through-hole inside the chemical solution holding tool is sealed, thereby improving the cobalt leaching temperature and the cobalt leaching efficiency.

A processing device for film cooling holes on blade of aviation engine includes a working box. A workpiece clamping mechanism is arranged in the working box for holding the workpiece. A cover body having an internal space communicated with an internal space of the working box is connected to an upper part of the working box. A laser processing mechanism is connected to a top end of the cover body and can produce laser rays to carry out laser processing on the workpiece. The cover body is connected to a liquid supply mechanism and an acid gas filtration mechanism. The liquid supply mechanism can spray an acidic solution to the workpiece in the working box, and the working box can collect the acidic solution. The acid gas filtration mechanism can filter acid steam produced during processing. A working method of the processing device is also provided.

A processing device for film cooling holes on blade of aviation engine includes a working box. A workpiece clamping mechanism is arranged in the working box for holding the workpiece. A cover body having an internal space communicated with an internal space of the working box is connected to an upper part of the working box. A laser processing mechanism is connected to a top end of the cover body and can produce laser rays to carry out laser processing on the workpiece. The cover body is connected to a liquid supply mechanism and an acid gas filtration mechanism. The liquid supply mechanism can spray an acidic solution to the workpiece in the working box, and the working box can collect the acidic solution. The acid gas filtration mechanism can filter acid steam produced during processing. A working method of the processing device is also provided.

A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.

A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.

Disclosed is a dry etching method for etching a metal film on a substrate with an etching gas containing a β-diketone and an additive gas, wherein the metal film contains a metal element capable of forming a complex with the β-diketone; and wherein the amount of water contained in the etching gas is 30 mass ppm or less relative to the amount of the β-diketone. It is preferable that the β-diketone used for the dry etching method is supplied from a β-diketone filled container, wherein the β-diketone filled container has a sealed container body filled with a β-diketone whose water content is 15 mass ppm or less relative to the β-diketone. This etching method enables etching of the metal film while suppressing etching rate variations from the initial stage to the later stage of use of the filled container.

The present disclosure provides a system for etching an exposed material on a substrate disposed within a process chamber using a hybrid atomic layer etching (ALE) process that combines a gas-phase surface modification step with a liquid-phase dissolution step within the same process chamber. In the hybrid ALE process disclosed herein, a gas-phase reactant is used to modify an exposed surface of the material to create a modified surface layer, and one or more liquid-phase reactants are used to selectively dissolve the modified surface layer without dissolving the material underlying the modified surface layer. Once the modified surface layer is selectively dissolved, the substrate may be dried and the gas-phase surface modification and liquid-phase dissolution steps may be repeated for one or more ALE cycles until a desired amount of the material is etched.

Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap tilling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.