According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.

According to the present invention, there are provided processes for preparing a porous composite material comprising a metal and a two-dimensional nanomaterial. In one aspect, the processes comprise the steps of: providing a powder comprising metal particles; heating the powder such that the metal particles fuse to form a porous scaffold; and forming a two-dimensional nanomaterial on a surface of the porous scaffold by chemical vapour deposition (CVD). Also provided are materials obtainable by the present processes, and products comprising said materials.

According to the present invention, there are provided processes for preparing a porous composite material comprising a metal and a two-dimensional nanomaterial. In one aspect, the processes comprise the steps of: providing a powder comprising metal particles; heating the powder such that the metal particles fuse to form a porous scaffold; and forming a two-dimensional nanomaterial on a surface of the porous scaffold by chemical vapour deposition (CVD). Also provided are materials obtainable by the present processes, and products comprising said materials.

Consolidated porous media samples and methods for their manufacture are described herein. An assembly has an outer tube having a first softening temperature and a sintered glass construct formed from plurality of beads of multiple sizes. The sintered glass construct defines pores and at least one fracture or channel. The assembly is formed by suspending at least one sheet or wire of dissolvable material in the outer tube, packing beads of different sizes around the sheet or wire, sintering the beads with the sheet or wire located therein at a temperature below the softening temperature of the tube, and dissolving the sheet or wire to generate a sintered construct defining at least one fracture or channel.

A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an Alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. In some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the WdC hard mask.

Described herein is an etching solution comprising water, phosphoric acid solution (aqueous), and a hydroxyl group-containing solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

Described herein is an etching solution comprising water, phosphoric acid solution (aqueous), and a hydroxyl group-containing solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

A patterning paste is disclosed for patterning metal nanowires, the patterning paste including a complexing agent containing guanidine thiocyanate. A method of selectively patterning a substrate having metal nanowires includes: providing a substrate having a surface bearing metal nanowires; and selectively applying the patterning paste to the substrate such that the metal nanowires are selectively cut into a pattern. A consumer electronic product includes: a substrate having a surface bearing metal nanowires. The metal nanowires of the substrate are selectively patterned by applying the patterning paste to the substrate such that the metal nanowires are selectively cut into the pattern.

A patterning paste is disclosed for patterning metal nanowires, the patterning paste including a complexing agent containing guanidine thiocyanate. A method of selectively patterning a substrate having metal nanowires includes: providing a substrate having a surface bearing metal nanowires; and selectively applying the patterning paste to the substrate such that the metal nanowires are selectively cut into a pattern. A consumer electronic product includes: a substrate having a surface bearing metal nanowires. The metal nanowires of the substrate are selectively patterned by applying the patterning paste to the substrate such that the metal nanowires are selectively cut into the pattern.