A heat storage apparatus according to the present disclosure includes a heat storage material and a member. The heat storage material forms a clathrate hydrate by cooling. The member has a surface with a plurality of holes. In the case that the lattice constant of the clathrate hydrate is denoted by L and the outside diameter of a cage included in the clathrate hydrate is denoted by D, the plurality of holes are spaced at intervals of 1L to 10L, and each of the plurality of holes has a hole diameter of 1D to 20D.

According to the present invention, there are provided processes for preparing a porous composite material comprising a metal and a two-dimensional nanomaterial. In one aspect, the processes comprise the steps of: providing a powder comprising metal particles; heating the powder such that the metal particles fuse to form a porous scaffold; and forming a two-dimensional nanomaterial on a surface of the porous scaffold by chemical vapour deposition (CVD). Also provided are materials obtainable by the present processes, and products comprising said materials.

According to the present invention, there are provided processes for preparing a porous composite material comprising a metal and a two-dimensional nanomaterial. In one aspect, the processes comprise the steps of: providing a powder comprising metal particles; heating the powder such that the metal particles fuse to form a porous scaffold; and forming a two-dimensional nanomaterial on a surface of the porous scaffold by chemical vapour deposition (CVD). Also provided are materials obtainable by the present processes, and products comprising said materials.

The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tungsten (W) and/or titanium nitride (TiN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tungsten (W) and/or titanium nitride (TiN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

A patterning paste is disclosed for patterning metal nanowires, the patterning paste including a complexing agent containing guanidine thiocyanate. A method of selectively patterning a substrate having metal nanowires includes: providing a substrate having a surface bearing metal nanowires; and selectively applying the patterning paste to the substrate such that the metal nanowires are selectively cut into a pattern. A consumer electronic product includes: a substrate having a surface bearing metal nanowires. The metal nanowires of the substrate are selectively patterned by applying the patterning paste to the substrate such that the metal nanowires are selectively cut into the pattern.

A patterning paste is disclosed for patterning metal nanowires, the patterning paste including a complexing agent containing guanidine thiocyanate. A method of selectively patterning a substrate having metal nanowires includes: providing a substrate having a surface bearing metal nanowires; and selectively applying the patterning paste to the substrate such that the metal nanowires are selectively cut into a pattern. A consumer electronic product includes: a substrate having a surface bearing metal nanowires. The metal nanowires of the substrate are selectively patterned by applying the patterning paste to the substrate such that the metal nanowires are selectively cut into the pattern.

An object of the present invention is to provide a treatment liquid having excellent resist film removal performance and excellent residue removal performance. Another object of the present invention is to provide a treatment method. The treatment liquid of an embodiment of the present invention is a treatment liquid containing an alkali compound and a hydroxycarboxylic acid, in which abrasive particles are not substantially contained, and a content mass ratio of a content of the hydroxycarboxylic acid to a content of the alkali compound is 0.001 and 1.0.

An object of the present invention is to provide a treatment liquid having excellent resist film removal performance and excellent residue removal performance. Another object of the present invention is to provide a treatment method. The treatment liquid of an embodiment of the present invention is a treatment liquid containing an alkali compound and a hydroxycarboxylic acid, in which abrasive particles are not substantially contained, and a content mass ratio of a content of the hydroxycarboxylic acid to a content of the alkali compound is 0.001 and 1.0.

According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.