An etchant is described that includes an N-heterocyclic carbene and optionally an appropriate solvent. The etchant was effective at etching a metallic surface having, for example, a metal oxide and/or metal, in both solution phase and vapour-phase. The etchant has been shown to effectively etch oxidized copper and tungsten.

An etchant is described that includes an N-heterocyclic carbene and optionally an appropriate solvent. The etchant was effective at etching a metallic surface having, for example, a metal oxide and/or metal, in both solution phase and vapour-phase. The etchant has been shown to effectively etch oxidized copper and tungsten.

A mask and a manufacturing method thereof are disclosed. The mask includes a mask substrate; the mask substrate includes a mask area; the mask area includes an active area and a dummy area located at a periphery of the active area; a plurality of via holes penetrating the mask substrate is disposed in both of the active area and the dummy area; the plurality of via holes disposed in the dummy area is filled with a blocking material.

A mask and a manufacturing method thereof are disclosed. The mask includes a mask substrate; the mask substrate includes a mask area; the mask area includes an active area and a dummy area located at a periphery of the active area; a plurality of via holes penetrating the mask substrate is disposed in both of the active area and the dummy area; the plurality of via holes disposed in the dummy area is filled with a blocking material.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I):

##STR00001##

3) at least one compound of structure (II):

##STR00002##

and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I):

##STR00001##

3) at least one compound of structure (II):

##STR00002##

and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): ##STR00001##
3) at least one compound of structure (II): ##STR00002##
and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): ##STR00001##
3) at least one compound of structure (II): ##STR00002##
and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

An etchant composition of an embodiment includes a persulfate, a four-nitrogen ring compound, a two-chlorine compound, a fluorine compound and water, and has a weight ratio of the four-nitrogen ring compound and the two-chlorine compound of about 1:0.5 to about 1:4. The etchant composition may etch a multilayer metal substrate of titanium/copper and may be used for manufacturing a multilayer metal pattern and an array substrate having excellent properties of etched patterns.

The present invention relates to a polishing composition, and more particularly, to a chemical mechanical polishing (CMP) composition used to chemically and mechanically polish a semiconductor wafer. The polishing composition of the present invention, by comprising anion-modified silica polishing particles in which the zeta potential () is 10 mV, can exhibit excellent polishing performance, and more specifically, which can achieve a high polishing rate with respect to an indium-containing polishing substrate, while improving the dispersibility of the composition and reducing residual defects on the substrate.