Patent classifications
C23F1/44
ETCHING METHOD
An etching method is capable of etching titanium selectively in the presence of copper. An etching liquid used in the method is low in toxicity and excellent in storage stability. The etching liquid includes at least one acid, such as, sulfuric acid, hydrochloric acid, or trichloroacetic acid, and at least one organic sulfur compound, such as a thioketone compound or a thioether compound.
ETCHING METHOD
An etching method is capable of etching titanium selectively in the presence of copper. An etching liquid used in the method is low in toxicity and excellent in storage stability. The etching liquid includes at least one acid, such as, sulfuric acid, hydrochloric acid, or trichloroacetic acid, and at least one organic sulfur compound, such as a thioketone compound or a thioether compound.
Nanostructured layer for graded index freeform optics
The present disclosure relates to a method for creating an optical component having a spatially controlled refractive index. The method may involve applying a thin metal material layer to a substrate. The thin metal material layer may then be heated to create a mask having a spatially varying nano-particle distribution. The substrate may then be etched, using the mask, to imprint a spatially patterned nanostructure pattern on a surface the substrate.
Nanostructured layer for graded index freeform optics
The present disclosure relates to a method for creating an optical component having a spatially controlled refractive index. The method may involve applying a thin metal material layer to a substrate. The thin metal material layer may then be heated to create a mask having a spatially varying nano-particle distribution. The substrate may then be etched, using the mask, to imprint a spatially patterned nanostructure pattern on a surface the substrate.
Etch Chemistry For Metallic Materials
An etch chemistry solution for treating metallic surfaces in which the etch chemistry solution includes an oxidizing agent and gluconic acid. The etch chemistry solution may also include an oxidizing agent and a short-chained polyethylene polymer glycol or a short-chained polyethylene copolymer glycol. The metallic surfaces are usually used in circuits such as flexible circuits.
Gap-Fill With Aluminum-Containing Films
Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.
Gap-Fill With Aluminum-Containing Films
Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.
THIN METAL MEMBRANE WITH SUPPORT
The present invention relates, generally, to a component containing a composite of at least two layers that are connected to each other, in which the first layer comprises a hole and the second layer has a thickness in the range of 1 to 50 m. The first and second layers each contain at least one metal and compositions of the first and second layers are different. Further objects of the present invention include a method for producing a component containing at least two layers that are connected to each other and have the aforementioned features, a method for producing a component containing at least three layers that are connected to each other and have the aforementioned features, as well as a component that is obtained by one of the aforementioned methods and a device containing at least one of the aforementioned components for use in a living body.
THIN METAL MEMBRANE WITH SUPPORT
The present invention relates, generally, to a component containing a composite of at least two layers that are connected to each other, in which the first layer comprises a hole and the second layer has a thickness in the range of 1 to 50 m. The first and second layers each contain at least one metal and compositions of the first and second layers are different. Further objects of the present invention include a method for producing a component containing at least two layers that are connected to each other and have the aforementioned features, a method for producing a component containing at least three layers that are connected to each other and have the aforementioned features, as well as a component that is obtained by one of the aforementioned methods and a device containing at least one of the aforementioned components for use in a living body.
SEMICONDUCTOR DEVICE WITH REDUCED VIA RESISTANCE
A semiconductor interconnect structure that has a first portion included in an upper interconnect level and a second portion included in a lower interconnect level. The semiconductor interconnect structure has a segment of dielectric capping material that is in contact with the bottom of the first portion, which separates, in part, the upper interconnect level from a lower interconnect level. The second portion is in electrical contact with the first portion.