A microfluidic device useable for performing live cell computed tomography imaging is fabricated with a cover portion including a first wafer with at least one metal patterned thereon, a base portion including a second wafer with at least one metal patterned thereon and negative photoresist defining recesses therein, and a diffusive bonding layer including a negative photoresist arranged to join the cover portion and the base portion. A composition useful in live cell computer topography includes a long-chain polysaccharide at a concentration of from about 0.01% to about 10.0% in cell culture medium for supporting cell life while enabling cell rotation rate to be slowed to a speed commensurate with low light level imaging.

In a step of washing Ge, SiGe or germanide layers in the production of semiconductor devices, resists or metal residues are efficiently removed through washing without dissolving Ge, SiGe or germanides. A sulfuric acid solution with a sulfuric acid concentration of 90 wt % or more and an oxidant concentration of 200 g/L or less is used as a washing liquid. Examples of the washing liquid include an electrolytic solution obtained by electrolysis of the sulfuric acid solution, a solution obtained by mixing hydrogen peroxide with the acid solution or a solution obtained by dissolving an ozone gas in the sulfuric acid solution. A treatment temperature during the washing is preferably 50? C. or less.

A filtration filter according to the present invention includes a surface layer composed mainly of Pd, a base material inside the surface layer and composed mainly of a PdNi alloy, and an intermediate layer between the surface layer and the base material, wherein the intermediate layer is composed mainly of a PdNi alloy in which a Pd:Ni ratio changes from a surface layer side toward a base material side.

A method for producing a hollow structure useful as a base material for a heat sink or the like which increases a heat dissipation property of devices mounted in various kinds of electronic apparatuses, without sacrificing downsizing, thinning, weight reduction, and multifunctionality, and provides a hollow structure. The method including: producing a plated composite by coating a surface of a core made of aluminum to form a copper plating layer; cutting off part of the plated composite to expose cut surfaces of the core; and turning a part corresponding to the core into a hollow part by immersing the plated composite in a sodium solution which dissolves aluminum but does not dissolve copper and selectively dissolving and removing only the aluminum, thereby producing a hollow structure whose skeletal part is composed of all copper plating layers.

A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.

A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.

The present invention provides an additive for tin stripping, comprising 0.1 to 20 wt % of copper corrosion inhibitor and 0.1 to 20 wt % of nickel corrosion inhibitor; wherein said weight percentage is based on the total weight of said additive. The present additive can be used with nitric acid conventionally used for metal-stripping for not only reducing the usage of nitric acid but also improving the efficiency of tin stripping. The present invention also provides a method for Tin recycle and a reaction tank for metal recycle. Both of them are favorable for satisfying the needs of metal recycle (especially, tin recycle) in the field.

The present invention provides an additive for tin stripping, comprising 0.1 to 20 wt % of copper corrosion inhibitor and 0.1 to 20 wt % of nickel corrosion inhibitor; wherein said weight percentage is based on the total weight of said additive. The present additive can be used with nitric acid conventionally used for metal-stripping for not only reducing the usage of nitric acid but also improving the efficiency of tin stripping. The present invention also provides a method for Tin recycle and a reaction tank for metal recycle. Both of them are favorable for satisfying the needs of metal recycle (especially, tin recycle) in the field.

A method of manufacturing three-dimensional thin-film nitinol (NiTi) devices includes: depositing multiple layers of nitinol and sacrificial material on a substrate. A three-dimensional thin-film nitinol device may include a first layer of nitinol and a second layer of nitinol bonded to the first layer at an area masked and not covered by the sacrificial material during deposition of the second layer.

In various embodiments, laser systems feature beam emitters thermally coupled to heat sinks comprising, consisting essentially of, or consisting of a metal-matrix composite of a thermally conductive metal and a refractory metal. At least a portion of the surface of the heat sink is treated to form a depleted region, and a diamond coating is deposited within and/or over the depleted region. The depleted region is substantially free of the thermally conductive metal or contains the thermally conductive metal at a concentration less than that of the body of the heat sink.