The present invention provides an additive for tin stripping, comprising 0.1 to 20 wt % of copper corrosion inhibitor and 0.1 to 20 wt % of nickel corrosion inhibitor; wherein said weight percentage is based on the total weight of said additive. The present additive can be used with nitric acid conventionally used for metal-stripping for not only reducing the usage of nitric acid but also improving the efficiency of tin stripping. The present invention also provides a method for Tin recycle and a reaction tank for metal recycle. Both of them are favorable for satisfying the needs of metal recycle (especially, tin recycle) in the field.

The present invention provides an additive for tin stripping, comprising 0.1 to 20 wt % of copper corrosion inhibitor and 0.1 to 20 wt % of nickel corrosion inhibitor; wherein said weight percentage is based on the total weight of said additive. The present additive can be used with nitric acid conventionally used for metal-stripping for not only reducing the usage of nitric acid but also improving the efficiency of tin stripping. The present invention also provides a method for Tin recycle and a reaction tank for metal recycle. Both of them are favorable for satisfying the needs of metal recycle (especially, tin recycle) in the field.

A semiconductor interconnect structure having a first electrically conductive structure having a plurality of bottom portions; a dielectric capping layer, at least a portion of the dielectric capping layer being in contact with a first bottom portion of the plurality of bottom portions; and a second electrically conductive structure in electrical contact with a second bottom portion of the plurality of bottom portions. A method of forming the interconnect structure is also provided.

A semiconductor interconnect structure having a first electrically conductive structure having a plurality of bottom portions; a dielectric capping layer, at least a portion of the dielectric capping layer being in contact with a first bottom portion of the plurality of bottom portions; and a second electrically conductive structure in electrical contact with a second bottom portion of the plurality of bottom portions. A method of forming the interconnect structure is also provided.

The present invention provides a chemical liquid that causes a small variation in a dissolving amount of a first metal-containing substance in a case where the chemical liquid is applied to an object to be treated containing the first metal-containing substance. The present invention also provides a method for treating an object to be treated. The chemical liquid according to an embodiment of the present invention contains water, a hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, and a specific compound represented by Formula (1).

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There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

A semiconductor interconnect structure having a first electrically conductive structure having a plurality of bottom portions; a dielectric capping layer, at least a portion of the dielectric capping layer being in contact with a first bottom portion of the plurality of bottom portions; and a second electrically conductive structure in electrical contact with a second bottom portion of the plurality of bottom portions. A method of forming the interconnect structure is also provided.

A semiconductor interconnect structure having a first electrically conductive structure having a plurality of bottom portions; a dielectric capping layer, at least a portion of the dielectric capping layer being in contact with a first bottom portion of the plurality of bottom portions; and a second electrically conductive structure in electrical contact with a second bottom portion of the plurality of bottom portions. A method of forming the interconnect structure is also provided.

A method for manufacturing a metal pattern, the method including forming a photosensitive layer pattern on a multilayer metal substrate including titanium and copper; providing an etchant composition on the multilayer metal substrate on which the photosensitive layer pattern is formed to form the source electrode and the drain electrode; and removing the photosensitive layer pattern, wherein the etchant composition includes a persulfate, a four-nitrogen ring compound, a two-chlorine compound, a fluorine compound, and water, and a weight ratio of the four-nitrogen ring compound and the two-chlorine compound is from about 1:0.5 to about 1:4.