The present invention refers to an electrolytic treatment device having an anodic compartment comprising a non-chromium (VI) etching solution to be treated and immersed therein an anode. The anodic compartment is separated by a membrane from a cathodic compartment comprising a cathodic solution comprising an inorganic acid, wherein the anode and the cathode are used comprising or consisting of a ternary or higher Pb alloy with Sn and at least one further metal selected from the group consisting of Sb, Ag, Co, Bi and combinations thereof. Moreover, a method for etching plastic parts is provided as well.

Provided are: a semiconductor treatment liquid containing a hypobromite ion, in which the concentration of the hypobromite ion is 0.1 μmol/L or more and less than 0.001 mol/L; a RuO.sub.4 gas generation inhibitor containing an onium salt composed of an onium ion and a bromine-containing ion, in which the hypobromite ion concentration is 0.1 μmol/L or more and less than 0.001 mol/L; and a method of producing a halogen oxyacid, the method including allowing a bromine salt, an organic alkali, and a halogen to react with each other to obtain the halogen oxyacid.

Method for recovering Cr from a pickling bath of an aqueous solution containing sulphate and Cr from a pickled metal, the method including: -forming an aqueous two-phase system from a portion of the pickling bath and a polymer including an unhindered ether function, the proportion of polymer in the ternary mixture including the pickling bath, considered to be a unique chemical component, water and polymer, ranging between the line of the equation «weight % of polymer=100%−weight % of pickling bath» and the binodal curve of the pickling bath/polymer mixture, the two-phase aqueous system including polymer and non-polymer phases;—separating the respective phases;—allowing precipitates containing Cr to form in the polymer phase;—carrying out solid/liquid separation of the polymer phase to separate the polymer and the precipitates containing Cr;—and processing the precipitates to recover the Cr. A facility is also disclosed.

Disclosed is a method of adjusting a concentration of a chemical liquid in a treatment liquid, the method including: treating a substrate by supplying a treatment liquid stored in a main tank from a nozzle in a heated state to the substrate, and recovering the treatment liquid used in the treatment of the substrate to the main tank directly or via still another tank, and then reusing the recovered treatment liquid, a concentration adjustment operation of adjusting a concentration of the treatment liquid in the main tank is performed in a standby time period in which the substrate is not treated with the treatment liquid, and the concentration adjustment operation is performed by discharging the treatment liquid in a heated state from the nozzle to evaporate a part of the diluting solution, and recovering the discharged treatment liquid to the main tank.

Disclosed is a method of adjusting a concentration of a chemical liquid in a treatment liquid, the method including: treating a substrate by supplying a treatment liquid stored in a main tank from a nozzle in a heated state to the substrate, and recovering the treatment liquid used in the treatment of the substrate to the main tank directly or via still another tank, and then reusing the recovered treatment liquid, a concentration adjustment operation of adjusting a concentration of the treatment liquid in the main tank is performed in a standby time period in which the substrate is not treated with the treatment liquid, and the concentration adjustment operation is performed by discharging the treatment liquid in a heated state from the nozzle to evaporate a part of the diluting solution, and recovering the discharged treatment liquid to the main tank.

The present invention is related to a composition for micro etching of a copper or a copper alloy surface, wherein the composition comprises i) at least a source of Fe.sup.3+ ions, ii) at least a source of Br.sup.− ions, iii) at least an inorganic acid, and iv) at least one etch refiner according to formula I

##STR00001## wherein R1 is selected from the group consisting of hydrogen, C.sub.1-C.sub.5-alkyl or a substituted aryl or alkaryl group; R2 is selected from the group consisting of hydrogen, C.sub.1-C.sub.5-alkyl or C.sub.1-C.sub.5-alkoxy; R3, R4 are selected from the group consisting of hydrogen and C.sub.1-C.sub.5-alkyl; and X.sup.− is a suitable anion. Further, the present invention is directed to a method for micro etching of copper or copper alloy surfaces using such a composition.

The present invention is related to a composition for micro etching of a copper or a copper alloy surface, wherein the composition comprises i) at least a source of Fe.sup.3+ ions, ii) at least a source of Br.sup.− ions, iii) at least an inorganic acid, and iv) at least one etch refiner according to formula I

##STR00001## wherein R1 is selected from the group consisting of hydrogen, C.sub.1-C.sub.5-alkyl or a substituted aryl or alkaryl group; R2 is selected from the group consisting of hydrogen, C.sub.1-C.sub.5-alkyl or C.sub.1-C.sub.5-alkoxy; R3, R4 are selected from the group consisting of hydrogen and C.sub.1-C.sub.5-alkyl; and X.sup.− is a suitable anion. Further, the present invention is directed to a method for micro etching of copper or copper alloy surfaces using such a composition.

The present invention provides a method for inhibiting a RuO.sub.4 gas generated from a ruthenium-containing liquid in the production process of a semiconductor element. The present invention provides a method for inhibiting a Ru.sub.4 gas generated from a ruthenium-containing liquid by adding an inhibitor for inhibiting the generation of a RuO.sub.4 gas, to a ruthenium-containing liquid. The present invention also provides an inhibitor for inhibiting the generation of a RuO.sub.4 gas, including at least one of a reducing agent and a basic compound.

The present invention provides an additive for tin stripping, comprising 0.1 to 20 wt % of copper corrosion inhibitor and 0.1 to 20 wt % of nickel corrosion inhibitor; wherein said weight percentage is based on the total weight of said additive. The present additive can be used with nitric acid conventionally used for metal-stripping for not only reducing the usage of nitric acid but also improving the efficiency of tin stripping. The present invention also provides a method for Tin recycle and a reaction tank for metal recycle. Both of them are favorable for satisfying the needs of metal recycle (especially, tin recycle) in the field.

The present invention provides an additive for tin stripping, comprising 0.1 to 20 wt % of copper corrosion inhibitor and 0.1 to 20 wt % of nickel corrosion inhibitor; wherein said weight percentage is based on the total weight of said additive. The present additive can be used with nitric acid conventionally used for metal-stripping for not only reducing the usage of nitric acid but also improving the efficiency of tin stripping. The present invention also provides a method for Tin recycle and a reaction tank for metal recycle. Both of them are favorable for satisfying the needs of metal recycle (especially, tin recycle) in the field.