The present disclosure provides a method for planarizing a metal-dielectric surface. The method includes: providing a slurry to a first metal-dielectric surface, wherein the first metal-dielectric surface comprises a silicon oxide portion and a metal portion, and wherein the slurry comprises a ceria compound; and performing a chemical mechanical polish (CMP) operation using the slurry to simultaneously remove the silicon oxide portion and the metal portion. The present disclosure also provides a method for planarizing a metal-dielectric surface and a method for manufacturing a semiconductor.

Described herein are polishing compositions containing an abrasive and a buffering material, wherein the pH of the polishing composition is about 6 to about 9, and methods of preparing and using the same.

Described herein are polishing compositions containing an abrasive and a buffering material, wherein the pH of the polishing composition is about 6 to about 9, and methods of preparing and using the same.

A method and a system for planarizing a membrane is disclosed. In one aspect, the method includes providing a resilient membrane and planarizing the surface of the membrane with a conditioning tool. The planarized membrane may be used in chemical mechanical planarization of a wafer. The method further includes finishing the surface of a wafer with the planarized membrane.

Provided herein are methods and compositions for chemical mechanical polishing (CMP) of a cobalt containing substrate. The present methods and compositions involve the use of a complexor, an oxidizer, an abrasive and a cobalt corrosion inhibitor including an amino acid having at least two acidic moieties. The present methods and compositions can be used to achieve a high cobalt removal rate, while effectively inhibiting corrosion during CMP.

A laminate for a see-through electrode includes a transparent base and a metal layer that is provided on at least one of both surfaces of the transparent base. The metal layer has a first surface and a second surface, the first surface facing the transparent base, the second surface being at a side opposite to the first surface. And the second surface has a kurtosis (Rku) ranging from 1.00 to 3.10, inclusive.

The present invention provides a CMP polishing agent containing polishing particles, a protective agent, and water, wherein the protective agent is a silsesquioxane polymer having a polar group. This provides a CMP polishing agent which can reduce polishing scratches produced due to polishing in a CMP process and has high polishing selectivity.

The present invention provides a CMP polishing agent containing polishing particles, a protective agent, and water, wherein the protective agent is a silsesquioxane polymer having a polar group. This provides a CMP polishing agent which can reduce polishing scratches produced due to polishing in a CMP process and has high polishing selectivity.

Provided herein are methods and compositions for chemical mechanical polishing (CMP) of metals. The present methods and compositions involve the use of a corrosion inhibitor having the general formula C.sub.mH.sub.2m+1(OCH.sub.2CH.sub.2).sub.n-L-R in the CMP slurry composition, where m is an integer between 6 and 11, inclusive of end points, and n is an integer greater than or equal to 6, L is a bond, O, S, R.sup.1, SR.sup.1, or OR.sup.1, where R.sup.1 is a C.sub.1-4 alkylene; and R is an anionic group. The present methods and compositions can be used to achieve a high metal removal rate, while effectively inhibiting metal corrosion during CMP, and are particularly useful for CMP of cobalt (Co).

A copper plasma etching method according an exemplary embodiment includes: placing a substrate on a susceptor in a process chamber of a plasma etching apparatus; supplying an etching gas that include hydrogen chloride into the process chamber; plasma-etching a conductor layer that include copper in the substrate; and maintaining a temperature of the susceptor at 10 C. or less during the plasma-etching.