A CMP slurry composition for polishing a metal wire and a polishing method, the CMP slurry composition including polishing particles; an oxidant; a complexing agent; a corrosion inhibitor; and deionized water, wherein the corrosion inhibitor includes an inorganic nitrite or ammonium nitrate.

The present invention relates to a polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished, including: a cobalt dissolution inhibitor; and a pH adjusting agent, wherein the polishing composition has a pH of 4 or more and 12 or less, and the cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof. According to the present invention, there is provided a polishing composition capable of suppressing the dissolution of a cobalt element-containing layer when a polishing object having a cobalt element-containing layer is polished.

The present disclosure provides chemical mechanical polishing compositions that achieve minimal dishing at reduced dishing reducer (DR) levels when compared to known CMP compositions. The compositions of the disclosure include a dynamic surface tension reducer (DSTR) which allows for lower levels of dishing reducer in the compositions. Indeed, the compositions of the disclosure allow for lower levels of dishing reducer to achieve the same dishing as known compositions having higher levels of dishing reducer. Deleterious effects of high DR levels are thereby avoided or minimized when employing the compositions of the disclosure.

The present disclosure provides chemical mechanical polishing compositions that achieve minimal dishing at reduced dishing reducer (DR) levels when compared to known CMP compositions. The compositions of the disclosure include a dynamic surface tension reducer (DSTR) which allows for lower levels of dishing reducer in the compositions. Indeed, the compositions of the disclosure allow for lower levels of dishing reducer to achieve the same dishing as known compositions having higher levels of dishing reducer. Deleterious effects of high DR levels are thereby avoided or minimized when employing the compositions of the disclosure.

The present disclosure relates to a method for forming a superhydrophilic oxide film on a pure titanium surface, and has the effect capable of realizing superhydrophilicity with a contact angle of 20 or less by optimizing time and voltage under anodization treatment conditions.

The present disclosure relates to a method for forming a superhydrophilic oxide film on a pure titanium surface, and has the effect capable of realizing superhydrophilicity with a contact angle of 20 or less by optimizing time and voltage under anodization treatment conditions.

Described herein are polishing compositions containing an abrasive and a buffering material, wherein the pH of the polishing composition is about 6 to about 9, and methods of preparing and using the same.

The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising alumina particles, silica particles, or a combination thereof, (b) a rate accelerator comprising a phosphonic acid, an N-heterocyclic compound, or a combination thereof, (c) a corrosion inhibitor comprising an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, a fatty acid amino acid, an amine, an amide, or a combination thereof, (d) an oxidizing agent, and (e) an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a cobalt layer, with the polishing composition.

The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising alumina particles, silica particles, or a combination thereof, (b) a rate accelerator comprising a phosphonic acid, an N-heterocyclic compound, or a combination thereof, (c) a corrosion inhibitor comprising an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, a fatty acid amino acid, an amine, an amide, or a combination thereof, (d) an oxidizing agent, and (e) an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a cobalt layer, with the polishing composition.

A treatment composition for chemical mechanical polishing includes: (A) a water-soluble amine; (B) a water-soluble polymer having an aromatic hydrocarbon group-containing repeating unit; and an aqueous medium. The treatment composition for chemical mechanical polishing preferably further includes (C) an organic acid having an aromatic hydrocarbon group and has a pH of 9 or more.