The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR.sup.1R.sup.2R.sup.3 wherein R.sup.1, R.sup.2, and R.sup.3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R.sup.1, R.sup.2, and R.sup.3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl--amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl--amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR.sup.1R.sup.2R.sup.3 wherein R.sup.1, R.sup.2, and R.sup.3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R.sup.1, R.sup.2, and R.sup.3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl--amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl--amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.

Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.

The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR.sup.1R.sup.2R.sup.3 wherein R.sup.1, R.sup.2, and R.sup.3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R.sup.1, R.sup.2, and R.sup.3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl--amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl--amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR.sup.1R.sup.2R.sup.3 wherein R.sup.1, R.sup.2, and R.sup.3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R.sup.1, R.sup.2, and R.sup.3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl--amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl--amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

A chemical mechanical polishing slurry for polishing a stainless steel substrate is provided, which comprises a content 1050 wt % of abrasive particles, a content 0.0012.0 wt % of a coolant, a content 0.0011.0 wt % of an oxidant, a content 105000 ppm of a lubricity improver, and a content 105000 ppm of a foam inhibitor. A particle size of the abrasive particles is in a range of 20500 nm. The alkaline polishing slurry according to the present invention is capable of increasing the polishing performance, surface quality, and surface passivation effect after the chemical-mechanical polishing process.

A method of manufacturing a semiconductor device includes loading, into a process chamber, a substrate including a first wiring layer having a first interlayer insulating film, a plurality of copper-containing films formed on the first interlayer insulating film and used as a wiring, an inter-wiring insulating film insulating between the plurality of copper-containing films, and a void formed between the plurality of copper-containing films, and a first diffusion barrier film formed on a portion of an upper surface of the copper-containing films to suppress diffusion of a component of the copper-containing films, and forming a second diffusion barrier film configured to suppress diffusion of a component of the copper-containing films on a surface of another portion, on which the first diffusion barrier film is not formed, in the copper-containing films.

A method of manufacturing a semiconductor device includes loading, into a process chamber, a substrate including a first wiring layer having a first interlayer insulating film, a plurality of copper-containing films formed on the first interlayer insulating film and used as a wiring, an inter-wiring insulating film insulating between the plurality of copper-containing films, and a void formed between the plurality of copper-containing films, and a first diffusion barrier film formed on a portion of an upper surface of the copper-containing films to suppress diffusion of a component of the copper-containing films, and forming a second diffusion barrier film configured to suppress diffusion of a component of the copper-containing films on a surface of another portion, on which the first diffusion barrier film is not formed, in the copper-containing films.

The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR.sup.1R.sup.2R.sup.3 wherein R.sup.1, R.sup.2, and R.sup.3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R.sup.1, R.sup.2, and R.sup.3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl--amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl--amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.