A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO.sub.2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

A method for selective aluminide diffusion coating removal. The method includes diffusing aluminum into a substrate surface of a component to form a diffusion coating. The diffusion coating includes an aluminum-infused additive layer and an interdiffusion zone. The diffusion coating is solution heat treated at a temperature and for a time sufficient to dissolve at least a portion of the interdiffusion zone. Thereafter the aluminum-infused additive layer is selectively removed. An aluminide diffusion coated turbine component is also disclosed.

The method includes determining an oxide layer removal energy density threshold from a section of the product, including transmitting, to a segment of the section, analyzing pulses of wavelength and of pulse duration equal to those of the stripping lasers to form a stripped region, capturing an image of the segment, determining, from this image, a dimension representative of the stripped region and evaluating, from the dimension, the removal energy density threshold; transmitting stripping pulses to the section, the energy density of the stripping pulses being higher than the removal energy density threshold, the stripping laser being controlled in such a way that every point of the section is exposed to an energy density higher than the removal energy density threshold.

The method includes determining an oxide layer removal energy density threshold from a section of the product, including transmitting, to a segment of the section, analyzing pulses of wavelength and of pulse duration equal to those of the stripping lasers to form a stripped region, capturing an image of the segment, determining, from this image, a dimension representative of the stripped region and evaluating, from the dimension, the removal energy density threshold; transmitting stripping pulses to the section, the energy density of the stripping pulses being higher than the removal energy density threshold, the stripping laser being controlled in such a way that every point of the section is exposed to an energy density higher than the removal energy density threshold.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.