A continuous cleaning installation 1 of a passing strip S includes a tank 2, an aqueous solution 3 inside the tank 2. It also includes at least a roller 4 immerged in the aqueous solution 3, at least an ultrasound emitter-5, a feed for feeding 6 an aqueous solution and emptying 7 the tank. Moreover, it also includes an aqueous solution level estimator for estimating 8 the aqueous solution level, a distance calculator for calculating 9 for each ultrasound emitter 5 its distance to the aqueous solution level and a power controller for controlling the power 10 of the at least one ultrasound emitter 5 and at least an impermeable closable opening 11 on at least a lateral side of the tank through which the at least one ultrasound emitter 5 can pass.

The present invention discloses a method and a composition for removing metal sulfide scale present on the surface of a metal, said method comprising: providing a liquid composition comprising: a chelating agent and a counterion component selected from the group consisting of: sodium gluconate; gluconic acid; tetrasodium EDTA; EDTA; propylenediaminetetraacetic acid (PDTA); nitrilotriacetic acid (NTA); N-(2-hydroxyethyl) ethylenediaminetriacetic acid (HEDTA); diethylenetriaminepentaacetic acid (DTPA); hydroxyethyliminodiacetic acid (HEIDA); cyclohexylenediaminetetraacetic acid (CDTA); diphenylaminesulfonic acid (DPAS); ethylenediaminedi(o-hydroxyphenylacetic) acid (EDDHA); glucoheptonic acid; gluconic acid; oxalic acid; malonic acid; succinic acid; glutaric acid; adipic acid; pimelic acid; suberic acid; azelaic acid; sebacic acid; phthalic acid; terephthalic acid; aconitic acid; carballylic acid; trimesic acid; isocitric acid; citric acid; L-glutamic acid-N,N-diacetic acid (GLDA); salts thereof; and mixtures thereof; and an aldehyde; and water exposing a surface contaminated with said metal sulfide scale to the liquid composition; allowing sufficient time of exposure to remove said metal sulfide scale from the contaminated surface and sequestration of the sulfur ions from solution.

The invention relates to the field of removing various types of deposits from a surface, specifically to means for cleaning metallic and ceramic surfaces of industrial equipment, and can be used for removing deposits, such as oxides of metals (iron, chromium, nickel, etc.), carbonate and salt deposits, asphaltene-resin-paraffin deposits and deposits of a petroleum nature, and deposits of an organic and biological deposits. The proposed solution for removing various types of deposits contains hydrogen peroxide, complexone, an anti-foaming agent, water-soluble calixarene and water in the following ratio: hydrogen peroxide, a catalyst for decomposing peroxide compounds, an antifoaming agent, complexone, water-soluble calixarene and water in the following quantitative ratio:2-35% by mass of hydrogen peroxide; 2-20% by mass of a catalyst for decomposing peroxide compounds; 3-10% by mass of complexone; 0.1-5% by mass of surface-active agent; 0.01%-1.0% by mass of anti-foaming agent; 0.01-1% by mass of water-soluble calixarene, with the remainder being water. The technical result is an increase in the effectiveness of action of a solution (degree of cleaning) for cleaning surfaces soiled with deposits having a high content of organic substances, while simultaneously extending the field of use of said solution.

An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.

An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.

A method for removing a metal compound capable of selectively removing an oxide of a metal, a nitride of a metal, or an oxynitride of a metal while suppressing the removal of silicon dioxide, silicon nitride, polysilicon, a simple substance of a metal, or the like. The method includes bringing at least one metal compound selected from oxides of a metal, nitrides of a metal, and oxynitrides of a metal into contact with a treatment liquid to remove it from a treatment object. The metal is at least one selected from tungsten, cobalt, nickel, tantalum, titanium, iron, copper, and molybdenum. The treatment liquid is an aqueous solution containing at least one compound for removal selected from carboxylic acids and salts thereof and contains the compound(s) for removal at a total concentration of 2 mass % or more.

The invention relates to a method for mattifying a turbine engine part (10) comprising a metal material, the method comprising a step of immersing said part in a chemical bath (14) for mattifying said metal part (10), the bath (14) comprising at least sodium fluoride (NaF) and hydrofluoric (HF) acid, characterised in that the immersion step lasts between 2 and 15 minutes.

A method for continuously cleaning a moving strip in a cleaning installation including a tank containing an aqueous solution, at least a roll immerged in the aqueous solution for guiding the strip into the tank, at least an ultrasound emitter a feed for feeding an aqueous solution inside the tank, a tank emptier for emptying the tank, an aqueous solution estimator for estimating the aqueous solution level in the tank, a distance calculator for calculating, for each ultrasound emitter, its distance to the aqueous solution level and a power controller for controlling the power of the at least one ultrasound emitter including the following steps, performed continuously: —estimating the aqueous solution level in the tank, —calculating for each ultrasound emitter its distance to the aqueous solution level, —comparing for each ultrasound emitter its distance to the aqueous solution level to a determined threshold.

A method for continuously cleaning a moving strip in a cleaning installation including a tank containing an aqueous solution, at least a roll immerged in the aqueous solution for guiding the strip into the tank, at least an ultrasound emitter a feed for feeding an aqueous solution inside the tank, a tank emptier for emptying the tank, an aqueous solution estimator for estimating the aqueous solution level in the tank, a distance calculator for calculating, for each ultrasound emitter, its distance to the aqueous solution level and a power controller for controlling the power of the at least one ultrasound emitter including the following steps, performed continuously: —estimating the aqueous solution level in the tank, —calculating for each ultrasound emitter its distance to the aqueous solution level, —comparing for each ultrasound emitter its distance to the aqueous solution level to a determined threshold.

A method of preparing a graphene coating on a metal surface, the method includes: pretreating the metal surface of a metal sample; immersing, spraying or hang brushing the metal sample with the pretreated metal surface by using a graphene oxide aqueous solution, so that the grapheme oxide aqueous solution covers inner and outer surfaces of the metal sample; baking and drying the metal sample covered with the graphene oxide aqueous solution; performing a microwave reduction treatment on the baked and dried metal sample; taking out the microwave-reduced metal sample, cleaning the metal sample with a cleaning agent to obtain a metal coated with the graphene coating.