An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.

The invention relates to a method for removing a substrate that is coated with an organic coated coating by means of ionogenic gel formation. In said method, a wet or dry organic coating that has not yet formed a film on the substrate is treated with an aqueous solution of a metal salt from main group I in the periodic table of the elements, a complexing agent and/or a basic compound having a pH value>10.

A stripper composition and a cleaning method are provided. The stripper composition includes an amine-based compound (A), a fatty acid (B) and a solvent (C). Based on a total usage amount of 100 wt % of the stripper composition, a usage amount of water is 1 wt % or less.

A stripper composition and a cleaning method are provided. The stripper composition includes an amine-based compound (A), a fatty acid (B) and a solvent (C). Based on a total usage amount of 100 wt % of the stripper composition, a usage amount of water is 1 wt % or less.

A method for removing a metal compound capable of selectively removing an oxide of a metal, a nitride of a metal, or an oxynitride of a metal while suppressing the removal of silicon dioxide, silicon nitride, polysilicon, a simple substance of a metal, or the like. The method includes bringing at least one metal compound selected from oxides of a metal, nitrides of a metal, and oxynitrides of a metal into contact with a treatment liquid to remove it from a treatment object. The metal is at least one selected from tungsten, cobalt, nickel, tantalum, titanium, iron, copper, and molybdenum. The treatment liquid is an aqueous solution containing at least one compound for removal selected from carboxylic acids and salts thereof and contains the compound(s) for removal at a total concentration of 2 mass % or more.

A method of removing a coating system from a component that is coated with the coating system. The method involves: (a) immersing the component in a caustic solution; (b) maintaining the component in the caustic solution at atmospheric pressure for a time 1.5 hours at a temperature 150 C. and 250 C.; (c) removing the component; (d) rinsing the component in water; (e) water jet blasting the component to remove the ceramic top coat layer and any thermally-grown oxide; (f) immersing the component in an acid solution; (g) ultra-high pressure water jetting the component; (h) aluminising the component to convert any diffused Pt within the bond coat layer to PtAl; (i) acid stripping and grit blasting the component; (j) immersing the component in a solution of nitric acid and/or sulphamic acid; and (k) ultra-high pressure water jetting the component to remove any PtAl.

A method of removing a coating system from a component that is coated with the coating system. The method involves: (a) immersing the component in a caustic solution; (b) maintaining the component in the caustic solution at atmospheric pressure for a time 1.5 hours at a temperature 150 C. and 250 C.; (c) removing the component; (d) rinsing the component in water; (e) water jet blasting the component to remove the ceramic top coat layer and any thermally-grown oxide; (f) immersing the component in an acid solution; (g) ultra-high pressure water jetting the component; (h) aluminising the component to convert any diffused Pt within the bond coat layer to PtAl; (i) acid stripping and grit blasting the component; (j) immersing the component in a solution of nitric acid and/or sulphamic acid; and (k) ultra-high pressure water jetting the component to remove any PtAl.

This invention is related to a process for purification of metallic objects comprising an oil-adsorbing step in the presence of a liquid and a layer silicate component.

This invention is related to a process for purification of metallic objects comprising an oil-adsorbing step in the presence of a liquid and a layer silicate component.

Disclosed is a conversion composition containing a trivalent chromium cation in an amount of 0.001 g/L to 20 g/L. Also disclosed is a system for treating a metal substrate that includes the conversion composition and a sealing composition comprising a lithium cation. Also disclosed is a method for treating a metal substrate that includes contacting at least a portion of a surface of the substrate with the conversion composition and then contacting at least a portion of the surface of the substrate with the sealing composition. Also disclosed is a substrate obtainable by treatment with the system and/or obtainable by the method of treating.