A method creating a patterned film with cuprous oxide and light comprising the steps of electrodepositing copper from a solution onto a substrate; illuminating selected areas of said deposited copper with light having photon energies above the band gap energy of 2.0 eV to create selected illuminated sections and non-illuminated sections; and stripping non-illuminated sections leaving said illuminated sections on the substrate. An additional step may include galvanically replacing the copper with one or more noble metals.

A photovoltaic device, such as a solar cell, including a copper-containing-grid metallization structure that contains a metal phosphorus layer as a diffusion barrier is provided. The copper-containing-grid metallization structure includes, from bottom to top, an electroplated metal phosphorus layer that does not include copper or a copper alloy located within a grid pattern formed on a front side surface of a semiconductor substrate, and an electroplated copper-containing layer. A method of forming such a structure is also provided.

Methods for light-induced electroplating of aluminum are disclosed herein. Exemplary methods may comprise preparing an ionic liquid comprising aluminum chloride (AlCl.sub.3) and an organic halide, placing the silicon substrate into the ionic liquid, illuminating the silicon substrate, the illumination passing through the ionic liquid, and depositing aluminum onto the silicon substrate via a light-induced electroplating process, wherein the light-induced electroplating process utilizes an applied current that does not exceed a photo-generated current generated by the illumination.

Methods for light-induced electroplating of aluminum are disclosed herein. Exemplary methods may comprise preparing an ionic liquid comprising aluminum chloride (AlCl.sub.3) and an organic halide, placing the silicon substrate into the ionic liquid, illuminating the silicon substrate, the illumination passing through the ionic liquid, and depositing aluminum onto the silicon substrate via a light-induced electroplating process, wherein the light-induced electroplating process utilizes an applied current that does not exceed a photo-generated current generated by the illumination.

The present invention concerns a method for the preparation of a catalyst onto a solid support of a (semi-)conductive material consisting in depositing said catalyst onto said support from a near-neutral aqueous solution containing at least one nickel or cobalt organic complex and at least one basic oxoanion, by a method selected in the group consisting of reductive electrodeposition, photochemical electrodeposition and photoelectrochemical deposition. The present invention also concerns said catalyst and uses thereof.

A method of depositing aluminum onto a substrate is disclosed. In this method, the substrate is disposed as cathode in an electrochemical cell with an anode and a liquid electrodeposition composition comprising an ionic liquid and a source of aluminum, and aluminum is electroplated onto the substrate. Residual water content in the electroplating bath is controlled by exposure to light in the presence of a photo-oxidation catalyst to decompose the water or species associated with water.

A method for coating a substrate with a CoPi modified BiVO.sub.4/WO.sub.3 heterostructure film includes direct current reactive sputtering tungsten (W) onto a substrate in a gaseous mixture containing oxygen to form a tungsten trioxide (WO.sub.3) film, direct current reactive sputtering bismuth (Bi) onto the tungsten trioxide (WO.sub.3) film in a gaseous mixture containing oxygen to form a dibismuth trioxide (Bi.sub.2O.sub.3) film, drop-casting a vanadyl acetylacetonate solution onto the Bi.sub.2O.sub.3 film and heating at a temperature of at least 450 C. in ambient air to convert the Bi.sub.2O.sub.3 film to a BiVO.sub.4 film, and photoelectrochemically coating the BiVO.sub.4 film with a cobalt-phosphate (CoPi) to form a modified film on the surface of the substrate. A photoanode containing the CoPi modified BiVO.sub.4/WO.sub.3 heterostructure film prepared by the method, and its application in water splitting.

An electrochemical-deposition apparatus includes an electrode array, a photoconductor, an electrically conductive layer, an electromagnetic-radiation emitter, an electric-power source, and a controller. The controller is configured to direct electric power to be supplied from the electric-power source to the electrically conductive layer and direct the electromagnetic-radiation emitter to generate electromagnetic radiation. When the electric power is supplied to the electrically conductive layer and when the electromagnetic radiation is generated, the photoconductor is illuminated at a first radiation level and a first level of electric current is enabled through the photoconductor and the at least one deposition electrode. When the electric power is supplied to the electrically conductive layer and when the electromagnetic radiation is generated, the photoconductor is illuminated at a second radiation level and a second level of electric current is enabled through the photoconductor and the at least one deposition electrode.

A method for coating a substrate with a Co-Pi modified BiVO.sub.4/WO.sub.3 heterostructure film includes direct current reactive sputtering tungsten (W) onto a substrate in a gaseous mixture containing oxygen to form a tungsten trioxide (WO.sub.3) film, direct current reactive sputtering bismuth (Bi) onto the tungsten trioxide (WO.sub.3) film in a gaseous mixture containing oxygen to form a dibismuth trioxide (Bi.sub.2O.sub.3) film, drop-casting a vanadyl acetylacetonate solution onto the Bi.sub.2O.sub.3 film and heating at a temperature of at least 450 C. in ambient air to convert the Bi.sub.2O.sub.3 film to a BiVO.sub.4 film, and photoelectrochemically coating the BiVO.sub.4 film with a cobalt-phosphate (Co-Pi) to form a modified film on the surface of the substrate. A photoanode containing the Co-Pi modified BiVO.sub.4/WO.sub.3 heterostructure film prepared by the method, and its application in water splitting.

Methods for light-induced electroplating of aluminum are disclosed herein. Exemplary methods may comprise preparing an ionic liquid comprising aluminum chloride (AlCl.sub.3) and an organic halide, placing the silicon substrate into the ionic liquid, illuminating the silicon substrate, the illumination passing through the ionic liquid, and depositing aluminum onto the silicon substrate via a light-induced electroplating process, wherein the light-induced electroplating process utilizes an applied current that does not exceed a photo-generated current generated by the illumination.